Effects of applied magnetic field and pressure on the diamagnetic susceptibility and binding energy of donor impurity in GaAs quantum dot considering the non-parabolicity model’s influence

Maouhoubi, Ibrahim; En-nadir, Redouane; El-Bakkari, K.; Zorkani, Izeddine; Hassani, Abdallah Ouazzani Tayebi; Jorio, Anouar

doi:10.1080/14786435.2022.2141469

Cited by 5 publications

(1 citation statement)

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“…Additionally, for GaN and InN materials, the pressure-dependent bandgap is given as follows [ 52 ]:

where

represents either GaN material or InN material, and

denotes the bandgap energy of the ν material at zero pressure. The correlation between the bandgap and the performance of the solar cells is explicitly addressed through the manipulation of the indium concentration in the material.…”

Section: Theory and Modelsmentioning

confidence: 99%

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Abboudi,

EL Ghazi,

En-nadir

et al. 2024

Nanomaterials

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This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.

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“…Additionally, for GaN and InN materials, the pressure-dependent bandgap is given as follows [ 52 ]:

where

represents either GaN material or InN material, and

Section: Theory and Modelsmentioning

confidence: 99%