Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot

Li, Zaoyang; Liu, Lijun; Liu, Xin; Zhang, Yunfeng; Xiong, Jie

doi:10.1016/j.jcrysgro.2011.11.053

Cited by 31 publications

(9 citation statements)

References 13 publications

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“…Second, we briefly introduce the influences of the processing conditions on the m‐c interface and the consequent influences on crystal quality. It was reported that the crucible shape and dimensions, 31 the argon flow rate, 36 and crystal growth rate 37 can influence the shape of the m‐c interface. In detail, Miyazawa et al 31 found that square crucible can induce a maximum deformation of the m‐c interface near the corner of the crucible, as shown in Figure 5.…”

Section: Growth Methods and Conditions Of Cast Mono‐like Siliconmentioning

confidence: 99%

“…In detail, Miyazawa et al 31 found that square crucible can induce a maximum deformation of the m‐c interface near the corner of the crucible, as shown in Figure 5. Li et al 36 claimed that the argon flow can modify the m‐c interface via altering the pattern and intensity of the melt convection at the middle stage of the solidification process. Furthermore, at the final stage of solidification, an increase in argon flow rate can make the m‐c interface more convex to the melt, which is because of the cooling effects of the argon gas flow.…”

Section: Growth Methods and Conditions Of Cast Mono‐like Siliconmentioning

confidence: 99%

See 1 more Smart Citation

Defect engineering in cast mono‐like silicon: A review

Song

2020

Progress in Photovoltaics

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Cast mono‐like silicon is a promising material for next‐generation silicon solar cells with higher efficiency and lower cost compared with currently commercialized silicon solar cells. So far, cast mono‐like silicon technique still faces several problems, including multicrystallization, dislocation clusters, sub‐grain boundaries, and impurity contamination, which hinder its mass‐scale applications in photovoltaic industry. In this review, we will introduce these common problems in turn and discuss a multitude of the reported studies on eliminating these problems. Furthermore, light and elevated temperature‐induced degradation (LeTID) was recently reported to be a severe problem of cast mono‐like silicon solar cells, which can cause power loss over 10% relative. This review will introduce the behaviors and the proposed mechanisms of LeTID as well as the methods to suppress LeTID in Section 4. In the subsequent section, the efficiency potential and distribution of cast mono‐like silicon solar cells are discussed. At last, a comprehensive summary will be given for this review.

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Section: Growth Methods and Conditions Of Cast Mono‐like Siliconmentioning

confidence: 99%

Section: Growth Methods and Conditions Of Cast Mono‐like Siliconmentioning

confidence: 99%

Defect engineering in cast mono‐like silicon: A review

Song

2020

Progress in Photovoltaics

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“…Transient simulations of global heat transfer, including melt convection, argon flow, thermal conduction, radiation, and phase change, are carried out for the entire DS process. The basic assumptions for the transient global model have been published elsewhere [14]. An enthalpy formulation based on fixed-grid methodology is used to model the phase change and accurately track the interface evolution during the melting and growing stages [15].…”

Section: Model Descriptionmentioning

confidence: 99%

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Liu

Zhang

et al. 2016

International Journal of Photoenergy

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We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

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“…During the process, the argon flow is in the range of 10-40 l/min and the pressure inside the furnace chamber is in the range of 500-800 mbar. The argon inlet contributes to the melt mixing quite significantly (Li et al, 2011(Li et al, , 2012b. The argon generates a cold spot in the center of the melt surface and triggers a strong surface tension-driven flow (Marangoni flow), which improves melt mixing substantially.…”

Section: The Hardwarementioning

confidence: 99%

Silicon Crystallization Technologies

Dold

2015

Semiconductors and Semimetals

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Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot

Cited by 31 publications

References 13 publications

Defect engineering in cast mono‐like silicon: A review

Defect engineering in cast mono‐like silicon: A review

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Silicon Crystallization Technologies

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