Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy

In this work, the characterization and analysis of the physics of a GaAs quantum well with AlGaAs barriers were carried out, according to an interior doped layer. An analysis of the probability density, the energy spectrum, and the electronic density was performed using the self-consistent method to solve the Schrödinger, Poisson, and charge-neutrality equations. Based on the characterizations, the system response to geometric changes in the well width and to non-geometric changes, such as the position and with of the doped layer as well as the donor density, were reviewed. All second-order differential equations were solved using the finite difference method. Finally, with the obtained wave functions and energies, the optical absorption coefficient and the electromagnetically induced transparency between the first three confined states were calculated. The results showed the possibility of tuning the optical absorption coefficient and the electromagnetically induced transparency via changes to the system geometry and the doped-layer characteristics.

show abstract

Self-Consistent Study of GaAs/AlGaAs Quantum Wells with Modulated Doping

Gil-Corrales

Morales

Duque

2023

Nanomaterials

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy

Cited by 1 publication

References 26 publications

Self-Consistent Study of GaAs/AlGaAs Quantum Wells with Modulated Doping

Self-Consistent Study of GaAs/AlGaAs Quantum Wells with Modulated Doping

Contact Info

Product

Resources

About