Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers

Abstract

To establish a high-efficiency and high-quality polishing process by controlling the workpiece environment, a prototype chemical mechanical polishing (CMP) machine that can perform double-side CMP simultaneously in a sealed pressure chamber was developed. Using this new machine, polishing experiments on single crystalline silicon carbide (SiC) wafers were carried out. The results showed that applying a highly pressurized O2 gas and ultraviolet light irradiation were effective in SiC CMP.

Effect of Mn-Based Slurries on Chemical Mechanical Polishing of SiC Substrates

“…YIN and KUROKAWA found the material removal rate could be significantly increased by using strong oxidants to enhance the chemical reaction on the surface. 10,11 DOI and SESHIMO developed a CMP/plasmachemical vaporization machining (CMP/P-CVM) method that significantly increased the removal efficiency and surface quality of SiC substrates. 12,13 Wang et al used femtosecond-laser-irradiationassisted CMP to improve material removal by destabilizing surface crystals.…”