Effects of Au catalyst on growth of β-Ga2O3 nanostructure at α-Al2O3 (0001) surface

Yasui, Kimihiro; Kohiki, Shigemi; Shimooka, Hirokazu; Shishido, Toetsu

doi:10.1016/j.solidstatesciences.2008.04.005

Cited by 5 publications

(1 citation statement)

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“…First of all, high oxygen diffusion at a high temperature can be attained by using Ag catalyst which resulted in enhanced nanowire growth. The diffusion coefficient of oxygen in silver thin film shows that Ag is a better catalyst for enhancing the density and length of Ga 2 O 3 nanowires than other nanoparticle catalysts, such as Au [37,38,39], Fe [40], or Pt [41], due to its higher value, which means that silver has a higher tendency to absorb oxygen. Secondly, the solubility of oxygen in molten silver thin film can be increased by increasing its temperature above its melting point of 961.8 °C.…”

Section: Resultsmentioning

confidence: 99%

Dynamics Contributions to the Growth Mechanism of Ga2O3 Thin Film and NWs Enabled by Ag Catalyst

et al. 2019

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In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the β-Ga2O3 thin film and nanowires. In addition, we explore and compare the sensing properties of the β-Ga2O3 thin film and nanowires for UV detection. The proposed process can be optimized to a high scale production Ga2O3 nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.

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