“…In spite of the lack of increase in overall capacitance density, the addition of a ZrO 2 buffer layer did allow for decreased leakage currents and improved reliability, 26 which are certainly important for a manufacturable process. An alternative to insulating buffer layers is the inclusion of conducting oxide layers such as LaNiO 3 , 27,31–33 (La,Sr)MnO 3 , 28 or RuO x 31 . Use of solution‐deposited LaNiO 3 layers on stainless steel, titanium, and nickel substrates resulted in a doubling of the permittivity to >400 and a decrease in loss tangent, both of which could be attributed to a reduction in interdiffusion between PZT films and substrates as well as a reduction in substrate interfacial oxidation 27 .…”