Effects of BCl₃Passivation on Pt/Al/n-InP Diodes

Abstract

High performance Schottky diodes formed with a BCl 3 passivation layer on Pt/Al/n-InP are presented. The diode realizes a barrier height as high as 0.85 eV, and the reverse current density is 1:44 Â 10 À6 A/cm 2 at À3 V. Secondary ion mass spectroscopy for depth profiles measurements reveals the existence of B and Cl elements at the contact interface. The electron spectroscopy chemical analysis shows that the surface layer of the passivated InP substrate is composed of InPO 4 and chloride. The improvement of the barrier height of Pt/Al/n-InP diode is presumably due to the formation of the aluminum oxide at the contact interface and due to the chlorine passivation on the interface states.

Formation and characterization of aluminum-oxide by stack-layered metal structure Schottky diode

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“…Many researcher proposed some method to improve the electrical characteristic, they including PH3 plasma treatments, [9] growing a thin P3N5 film, [10] a POXNyHZ film,[11] a InSb film, [12] an interfacial oxide layer, [13][14][15][16] low temperature deposition techniques [ 17]or stacked metal structure Ag/Al [18], Pt/Al [19,20], and Ni/Ai/Ni [21] . All the reports showed higher effective barrier height than that of conventional single metal/n-InP diode.…”