Effects of beam spot size on the correlation between laser and heavy ion SEU testing

Miller, F.; Buard, N.; Carrière, T.; Dufayel, R.; Gaillard, R.; Poirot, P.; Palau, J.M.; Sagnes, B.; Fouillat, P.

doi:10.1109/tns.2004.839261

Cited by 37 publications

(6 citation statements)

References 13 publications

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“…The SEU sensitive regions are well consistent with the laser SEU sensitivity mapping results and previous work. Meanwhile, it notes that the sensitive area obtained in mapping results with threshold laser energy is much larger than that obtained in simulation results due to the laser spot size and charge carrier diffusions [24]. It is shown in Figure 9 and Figure 10 that the resolution of laser SEU sensitivity mapping technique is about 0.5 μm, indicating that laser mapping technology is reliable for this deep submicron technology device.…”

Section: Resultsmentioning

confidence: 93%

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Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Chen

Belev

et al. 2019

Materials

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Single-event effects (SEEs) in integrated circuits and devices can be studied by utilizing ultra-fast pulsed laser system through Two Photon Absorption process. This paper presents technical ways to characterize key factors for laser based SEEs mapping testing system: output power from laser source, spot size focused by objective lens, opening window of Pockels cell, and calibration of injected laser energy. The laser based SEEs mapping testing system can work in a stable and controllable status by applying these methods. Furthermore, a sensitivity map of a Static Random Access Memory (SRAM) cell with a 65 nm technique node was created through the established laser system. The sensitivity map of the SRAM cell was compared to a map generated by a commercial simulation tool (TFIT), and the two matched well. In addition, experiments in this paper also provided energy distribution profile along Z axis that is the direction of the pulsed laser injection and threshold energy for different SRAM structures.

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Section: Resultsmentioning

confidence: 93%

“…Spot size is a key parameter for laser SEEs testing. Because the profile of laser beam is Gaussian distribution [22], with different spot size, the irradiation would be different correspondingly, and further affect parameters measured in SEEs testing [24,25].…”

Section: Methodsmentioning

confidence: 99%

Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Chen

Belev

et al. 2019

Materials

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“…Unlike particles based SEE testing, the spot size of a laser beam is a key factor to the testing results. There are several studies that try to specify the effect of spot size to SEE testing [13,14], but most of them are based on the SPA process. Based on the TPA theory [15], the generation of EHPs is highly dependent on laser irradiation and EHPs can be only generated in the focused zone of laser beam.…”

Section: Spot Size and Spatial Resolutionmentioning

confidence: 99%

Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research

Belev

Tian

et al. 2020

Applied Sciences

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Research on single event effects (SEEs) is significant to the design and manufacture of modern electronic devices. By applying two photon absorption (TPA) ultra-fast pulsed lasers, extra electron-hole pairs (EHPs) are generated in a desired location on a chip, simulating the process that could occur in the circuit by energetic particles. In this study, a SEE sensitivity mapping system is described which uses this method to generate real-time sensitivity maps for various electronic devices. The system hardware includes an attenuator to control the energy, a Pockels cell as a fast-optical switcher and a mirror–mirror module to project the laser beam into a certain location. The system software developed for this application controls the laser system, automatically generates sensitivity maps, communicates with the testing devices and logs the SEE results. The two main features of this laser mapping system are: high scanning velocity for large area scanning (about 1 × 1 mm) and high spatial resolution for small area scanning (about 1 × 1 μm). To verify this mapping system, sensitivity maps were generated for static random access memory (SRAM) built with 65 nm technology and for commercial operational amplifiers (op-amps). The achieved sensitivity maps were compared with circuitry analysis and laser testing results, confirming this mapping system to be effective.

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“…With the laser spot size, exceeding the dimensions of the IC sensitive area, it is necessary to take into account the socalled Spot Size effect, giving an additional contribution to the error in determining the value of laser-generated excess charge 5 .…”

Section: Irs-mappingmentioning

confidence: 99%

Ultrashort pulsed laser tools for testing of semiconductor elements hardness to single event effects, caused by cosmic heavy charged particles

et al. 2015

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The installations for laser testing of microelectronic elements (first of all -integrated circuits) of devices for space applications for hardness to local radiation effects from heavy charged particles are presented. The possibility of a focused pulsed laser radiation application to the study of local radiation effects, caused by single heavy charged particles, is explained. The fundamentals of an approach to the construction of test sets, based on the picosecond and femtosecond lasers and systems for focusing their radiation, are considered. The main technical requirements for the basic modules of sets for laser testing (laser wavelength and pulse duration and repetition rate, spatial beam parameters and minimal spot size, speed of object movement and so on) are substantiated. All worked out sets have a full-featured software for the operational management of all modules of the laser test facility, including the positioning of the object, to provide feedback from the measurement results of the reaction of the object on the laser excitation. The parameters of developed laser hardware and software systems and their foreign counterparts are compared. Further improvement directions for laser testing tools are briefly outlined. The discussion is also presented of described hardware technical and operational characteristics, allowing to use it for a variety of scientific research studies, requiring selective (with submicron spatial resolution) object excitation by ultrashort laser pulses and recording responses to this effect with the exact timing of the moment of excitation, as well as to perform a variety of high precision technological operations.

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Effects of beam spot size on the correlation between laser and heavy ion SEU testing

Cited by 37 publications

References 13 publications

Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Application of Two-Photon-Absorption Pulsed Laser for Single-Event-Effects Sensitivity Mapping Technology

Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research

Ultrashort pulsed laser tools for testing of semiconductor elements hardness to single event effects, caused by cosmic heavy charged particles

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