2021
DOI: 10.1007/s00339-021-05094-4
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Effects of Bi and Mn codoping on the physical properties of barium titanate: investigation via DFT method

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Cited by 46 publications
(12 citation statements)
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“…Figure 10 a–c show the direction dependence of E , G , and v , respectively, at 0 and 30 GPa pressure to highlight the anisotropic character of KGeF 3 and RbGeF 3 . The isotropy of is represented by the spherical 3D plots, whereas anisotropy is revealed by non-spherical plots 7 . The elastic anisotropy of studied perovskites is appeared in all directions, as indicated by the non-spherical 3D contour plots.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 10 a–c show the direction dependence of E , G , and v , respectively, at 0 and 30 GPa pressure to highlight the anisotropic character of KGeF 3 and RbGeF 3 . The isotropy of is represented by the spherical 3D plots, whereas anisotropy is revealed by non-spherical plots 7 . The elastic anisotropy of studied perovskites is appeared in all directions, as indicated by the non-spherical 3D contour plots.…”
Section: Resultsmentioning
confidence: 99%
“…The versatile applicability of these perovskites in multiple sectors, e.g., semiconductors, sensors, superconductivity, photovoltaic cells, optoelectronic devices, and LEDs (light-emitting devices) 1 3 puts them in the center of attention. As a result, the researchers conducted both experimental and theoretical studies 4 – 7 on the physical behavior of perovskite materials to create new possibilities for their applications in various optoelectronic fields. Interestingly, the improvement of perovskite solar cells (PSCs) has been accelerated, resulting in power conversion efficiency (PCE) of 22.1% 8 .…”
Section: Introductionmentioning
confidence: 99%
“…This observed trend aligns well with the Penn's model [80], which suggests that the static dielectric functions are inversely proportional to the electronic band gap energy of the compounds. Moreover, it is generally true that materials with larger static dielectric constants tend to exhibit better optoelectronic properties [81,82]. Based on these values, it can be inferred that InSnI 3 is expected to exhibit the highest optoelectronic performance, followed by InSnBr 3 , and InSnCl 3 .…”
Section: ( ) ( ) ( ) ( )mentioning
confidence: 99%
“…This indicates that, based on their 3 1 (0) values, TlSnI 3 is expected to exhibit better optoelectronic performance compared to TlSnBr 3 and TlSnCl 3 . This is due to the fact that materials with larger 3 1 (0) values tend to have lower charge recombination, 80,81 which is favourable for optoelectronic applications. In addition, there is an inverse relationship between 3 1 (0) and the energy band gaps of the TlSnCl 3 , TlSnBr 3 , and TlSnI 3 compounds, which aligns with the Penn model.…”
Section: Optical Propertiesmentioning
confidence: 99%