Effects of Bias on the Responsivity of GaN Metal–Semiconductor–Metal Photodiodes

Chang

Physica Status Solidi (a)

et al. 2010

AlN, an important semiconductor with the widest band gap among III‐nitrides, was employed to construct solar blind metal–semiconductor–metal photodetectors (MSM‐PDs). MSM‐PDs were fabricated on AlN epitaxial thin films deposited on GaN/sapphire using a helicon sputtering system at a low temperature of 300 °C. The dark current of the device is as low as 200 fA at 20 V and the photocurrent illuminated by a D2 lamp increases more than two orders of magnitude. The photocurrent increases almost linearly with the incident optical power at the wavelength of 200 nm. The results show that the low temperature grown AlN MSM device is suitable for the application of deep UV detection.

Section: Resultsmentioning

confidence: 73%

Fabrication study of AlN solar‐blind (<280 nm) MSM photodetectors grown by low‐temperature deposition

Chang

Physica Status Solidi (a)

et al. 2010

“…On the other hand, devices fabricated either on highly insulating AlGaN epitaxial layers [5,10,[17][18][19][20], or consisting of two interdigitated Schottky barriers instead of ohmic contacts [19][20][21][22] (MSM photodiodes) behave linearly with optical power, and present a sharp cutoff, with a high UV/visible contrast (>10 4 ), as shown in Fig. 1.…”

Section: Algan Metal-semiconductor-metal Photodetectorsmentioning

confidence: 99%

“…1. A certain internal gain has been observed in some devices [10,20]. The time response of these structures can be as fast as 100 ps [21].…”

Section: Algan Metal-semiconductor-metal Photodetectorsmentioning

confidence: 99%

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Application and Performance of GaN Based UV Detectors

Monroy

Calle

Pau

et al. 2001

phys. stat. sol. (a)

Self Cite

In this work, we discuss the state-of-the-art of different types of AlGaN-based ultraviolet photodetectors, including metal-semiconductor-metal photodetectors, Schottky barrier photodiodes and p-i-n structures. New metal-insulator-semiconductor photodiodes will be proposed as low-noise UV photodetectors, improving the detectivity by more than one order of magnitude in comparison with standard Schottky photodiodes, and with a higher fabrication yield than metal-semiconductor-metal photodiodes.

Applied Physics Letters

“…Schottky MSM photodiodes present very low dark current due to the high material resistivity and the rectifying nature of the contacts. 4,9 As shown in Fig. 1 for GaN devices fabricated on sample A, with an active area of 250 ϫ250 m 2 , the dark current can remain below 10 pA even when operating at 100 V bias.…”

mentioning

confidence: 94%

Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection

Monroy

Palacios

Hainaut

et al. 2002

Self Cite

We report on the fabrication and characterization of low dark-current GaN metal-semiconductormetal ͑MSM͒ photodiodes. Their quantum efficiency in the vacuum-ultraviolet range has been analyzed, demonstrating that these devices are an excellent choice for high-energy photodetection. Models to explain and control the performance as a function of residual doping and geometry are applied to GaN-based MSM photodiodes.