Effects of bias voltage on the properties of ITO films prepared on polymer substrates

Lee, Jaehyeong; Jung, Hyun–Kyo; Lim, Dong-Gun; Yang, Kea-Joon; Song, Wooseok; Yi, Junsin

doi:10.1016/j.tsf.2004.11.144

Cited by 31 publications

(13 citation statements)

References 11 publications

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“…The larger grains so formed reduce the recombination and scattering of charge carriers at grain boundaries resulting in high carrier mobility in ITO films prepared using an rf power up to 250 W in the present study [39]. The observed rapid reduction in resistivity around 250 W may be also attributed to a transition from amorphous to polycrystalline phase [40].…”

Section: Discussionmentioning

confidence: 47%

Amorphous to crystalline transition and optoelectronic properties of nanocrystalline indium tin oxide (ITO) films sputtered with high rf power at room temperature

Malathy

Sivaranjani

Vidhya

et al. 2009

Journal of Non-Crystalline Solids

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Section: Discussionmentioning

confidence: 47%

Amorphous to crystalline transition and optoelectronic properties of nanocrystalline indium tin oxide (ITO) films sputtered with high rf power at room temperature

Malathy

Sivaranjani

Vidhya

et al. 2009

Journal of Non-Crystalline Solids

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“…1c. This decrease may be due to a combination of two effects: (i) with the increase in bias voltage, the level of ion bombardment of the coating increases and (ii) an increased level of self sputtering of the deposited coating may occur [30].…”

Section: Resultsmentioning

confidence: 99%

“…3c. As outlined earlier, this may be due to an increase in the level of ion bombardment leading to an increase in coating density with an associated decrease in coating thickness [30].…”

Section: Coating Surface Roughnessmentioning

confidence: 94%

Deposition and characterization of NiOx coatings by magnetron sputtering for application in dye-sensitized solar cells

Awais

Rahman

MacElroy

et al. 2010

Surface and Coatings Technology

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Nickel oxide (NiO x ) due to its p-type nature has considerable potential as a photocathodic material in energy conversion devices such as dye-sensitized solar cells (DSSCs). However, NiO x has not been extensively used for this application mainly because of low light harvesting efficiency due to limited dye loading on the coatings. In this study NiO x coatings were deposited using the dc-magnetron sputtering technique from a nickel target in an argon/oxygen plasma. One of the advantages of magnetron sputtering is the ability to control 2 coating properties such as mechanical performance and chemical stoichiometry. It is anticipated that by enhancing the interconnectivity between NiO x particles and by optimizing surface roughness, it may be possible to enhance dye adsorption and increase its ability to absorb visible light. NiO x coatings were deposited onto both silicon wafer and indium tin oxide (ITO) covered glass substrates. The influence of deposition parameters such as pressure, nickel target current and substrate bias voltage were correlated with the coating properties of surface roughness, thickness, crystallographic structure and surface energy. This evaluation was carried out using optical profilometry, spectroscopic ellipsometry, XRD and contact angle measurements respectively. It was observed that deposited coating morphology and roughness were significantly influenced by the deposition parameters. For example increasing the deposition pressure from 0.20 to 0.40 Pa led to an increase in surface roughness (Ra) from 1.6 to 3 nm. Associated with this increase in roughness the surface energy increased from 36 to 61 mN/mm. The NiO x coatings were spectrally sensitized with Rucomplex dye containing -COOH groups as anchoring moieties. The dye adsorptions on NiO x coatings, deposited on ITO substrates, were investigated in transmission mode using UV-vis spectroscopy in the range of 400 -800 nm. It was observed that for the coatings with the highest surface energy, there was an increase of up to 60 % in the level of dye adsorption. The electroactivity of the NiO x thin films deposited on Ni substrate at 0.4 Pa has been verified through the occurrence of redox processes of reduction and lithium intercalation within the oxide film.

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“…Numerous publications have addressed the challenge of achieving increasingly low resistivity and high optical transmission in these films [2][3][4][5][6][7]. This is an unusual combination of properties since good optical transmission requires a material with a band gap of greater than approximately 3.0 eV whilst high electrical conductivity necessitates a high number of free charge carriers with high mobility.…”

Section: Introductionmentioning

confidence: 99%

Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

et al. 2009

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Abstract:Tin doped indium oxide (ITO) has been directly deposited onto a variety of flexible materials by a reactive sputtering technique that utilises a remotely generated, high density plasma. This technique, known as high target utilisation sputtering (HiTUS), allows for the high rate deposition of good quality ITO films onto polymeric materials with no substrate heating or post deposition annealing. Coatings with a resistivity of 3.8 ×10−4 Ωcm and an average visible transmission of greater than 90% have been deposited onto PEN and PET substrate materials at a deposition rate of 70 nm/min. The electrical and optical properties are retained when the coatings are flexed through a 1.0 cm bend radius, making them of interest for flexible display applications.

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Effects of bias voltage on the properties of ITO films prepared on polymer substrates

Cited by 31 publications

References 11 publications

Amorphous to crystalline transition and optoelectronic properties of nanocrystalline indium tin oxide (ITO) films sputtered with high rf power at room temperature

Amorphous to crystalline transition and optoelectronic properties of nanocrystalline indium tin oxide (ITO) films sputtered with high rf power at room temperature

Deposition and characterization of NiOx coatings by magnetron sputtering for application in dye-sensitized solar cells

Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

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