2020
DOI: 10.48550/arxiv.2012.14370
|View full text |Cite
Preprint
|
Sign up to set email alerts
|

Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs

Abstract: Unbiased (biased) illuminations are performed at low temperatures on dopant-free twodimensional electron gases (2DEGs) at different depths in undoped GaAs/AlGaAs, while gates are kept grounded (held at a finite voltage, either positive or negative). Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result in a gain in mobility (for the same electron density), driven by the reduction of background impurities. In 2DEGs closer to the surface, unbiased illuminations result in a mobility… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 54 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?