Effects of Bismuth Oxide Buffer Layer on BiFeO<sub>3</sub> Thin Film

Leu, Chyi‐Ming; Lin, Ting‐Hui; Chen, Shuyu; Hu, Chi‐Chang

doi:10.1111/jace.13377

Cited by 27 publications

(10 citation statements)

References 34 publications

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“…Several methods have been employed for the preparation of thin films, such as pulsed laser deposition (Eason 2007), sputtering (Shirsath et al 2016), electron beam evaporation (Li et al 2016), metallo-organic decomposition (Díaz-Castañón et al 2014), and sol-gel processing (Leu et al 2015;Solovyova et al 2015). Among the available synthesis methods, sol-gel method that uses aqueous solution of metal salts has recently emerged as a versatile technique for the preparation of thin films.…”

Section: Ferrite Thin Filmmentioning

confidence: 99%

Ferrites Obtained by Sol-Gel Method

Shirsath

Wang

Jadhav

et al. 2018

Handbook of Sol-Gel Science and Technology

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Ferrites are ferrimagnetic materials, a broad class of magnetic oxides with its remarkable structural, electrical, and magnetic properties making them suitable for a variety of applications. These properties strongly depend upon the method of preparation. Sol-gel method is having countless advantages over other methods to obtain the ferrite with desired nanoarchitecture. In this chapter, the effects of

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Section: Ferrite Thin Filmmentioning

confidence: 99%

Ferrites Obtained by Sol-Gel Method

Shirsath

Wang

Jadhav

et al. 2018

Handbook of Sol-Gel Science and Technology

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show abstract

“…Moreover, sol-gel method as an alternative route has been widely used to prepare BFO films [10,11] because of its low cost, easy to & Wei Cai caiwei_cqu@163.com adjust composition and integration with devices. To further improve the electric properties of BFO thin films, some attempts such as ion substitution [12][13][14][15][16], buffer layer [17,18], epitaxy [19] have been conducted. Moreover, thickness of BFO thin films has great effect on electric properties [5,[20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

The effects of grain size on electrical properties and domain structure of BiFeO3 thin films by sol–gel method

Lei

Cai

et al. 2015

J Mater Sci: Mater Electron

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BiFeO 3 (short for BFO) thin films with different grain sizes were fabricated via sol-gel spin-coating method. The effects of grain size on leakage behavior, dielectric, ferroelectric, piezoelectric properties and domain structure of BFO thin films have been investigated systematically. The X-ray diffraction results show that BFO thin films are rhombohedral distortion perovskite structure. Compared with the films annealed at 550°C, the grain size of BFO thin films annealed at 600°C is larger and the roughness is less, and the crystallinity and purity are higher. The leakage current density of BFO thin films with larger grain size is much lower than that of the films with smaller grain size. It is found that the conduction behavior of BFO thin films with smaller grain size transforms from Ohmic to space-charge-limited current and Fowler-Nordheim tunneling conduction as electric field increases. But there is the only transition from Ohmic conduction to space-charge-limited conduction for the thin films with larger grain size as electric field increase. The room temperature dielectric constant and remnant polarization of BFO thin films with larger grain size are higher than that of the films with smaller grain size. The ferroelectric domain size increases with the increase of grain size so that the ferroelectric polarization in BFO thin films with larger grain size enhances. Moreover, it is found that there are negatively charged ''tail to tail'' domain wall in BFO thin films with smaller grain size and positively charged ''head to head'' domain wall in the sample with larger grain size. The majority carriers including positively charged hole or oxygen vacancy assemble on negatively charged ''tail to tail'' domain wall in p-type BFO thin films with smaller grain size and result in relative higher leakage current. The piezoelectric coefficient of the films with larger grain size is much higher than that of the sample with smaller grain size.

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“…ABO 3 -type ferroelectric perovskites are potential candidates for microwave (MW) applications, due to their physiochemical stability and excellent electrical properties [1][2][3]. Barium strontium titanate (BST) is an important ferroelectric perovskite, which has been identified as a potential alternative to SiO 2 and Si 3 N 4 dielectrics for the next generation dynamic random access memories (DRAM).…”

Section: Introductionmentioning

confidence: 99%