Abstract:The die-bonding layer between chips and substrate determinates the heat conduction efficiency of high-power LED. Sn-based solder, AuSn20 eutectic, and nano-Ag paste were widely applied to LED interconnection. In this paper, the optical–thermal performances and high-temperature reliability of LED with these bonding materials have systematically compared and studied. The thermal conductivity, electrical resistivity, and mechanical property of these bonding materials were characterized. The LED module packaged wi… Show more
“…The temperature of a high-power LED device may exceed 373 K or even higher, which will lead to thermal quenching, so it is very important for a phosphor to have a good thermal stability. 30 Fig. 6a showed the NIR spectra of SrTiO 3 –Ni 2+ , SrTiO 3 –Ni 2+ –Yb 3+ and SrTiO 3 –Ni 2+ –Yb 3+ –Ta 5+ phosphors under excitation by 365 nm near-ultraviolet light at different temperatures (303–483 K).…”
A synergistic strategy to efficiently improve the near-infrared luminescence of a Ni2+-doped SrTiO3 perovskite-type phosphor both in terms of luminous intensity and thermostability by cation site substitution.
“…The temperature of a high-power LED device may exceed 373 K or even higher, which will lead to thermal quenching, so it is very important for a phosphor to have a good thermal stability. 30 Fig. 6a showed the NIR spectra of SrTiO 3 –Ni 2+ , SrTiO 3 –Ni 2+ –Yb 3+ and SrTiO 3 –Ni 2+ –Yb 3+ –Ta 5+ phosphors under excitation by 365 nm near-ultraviolet light at different temperatures (303–483 K).…”
A synergistic strategy to efficiently improve the near-infrared luminescence of a Ni2+-doped SrTiO3 perovskite-type phosphor both in terms of luminous intensity and thermostability by cation site substitution.
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