Effects of breakdown on nondissipative current flow on the quantized hall resistance measurement in Si-MOSFET's

Abstract

Abstrúct-ExptñmtnUAresults for Si-MOSFET's indicate that breakdown of nondissipative current flow occurs at first in the vicinity of the source^rain electrodes. The effect of this inhomogeneous dissipative area on the value of the quantized Hall resistance is demonstrated to be less than a few parts in 10^ when the diagonal resistivity fij^ is sufficiently small. Measurement by the use of a Josephson potentiometer Is possible even in the presence of an appreciable effect of the dissipative region on the shape of the Hall voltage plateau.