Effects of bulk inversion asymmetry and low interface symmetry on the optical properties of broken-gap heterostructures

Semenikhin, I.; Zakharova, A.; Nilsson, K. Peter R.; Chao, K. A.

doi:10.1103/physrevb.76.035335

Cited by 17 publications

(35 citation statements)

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“…Theoretical study showed a strong depen dence of the optical matrix elements and absorption coefficients on the direction of light polarization in type I and type II heterostructures [9,10,[12][13][14][15]. This anisotropy is investigated here.…”

Section: Introductionmentioning

confidence: 78%

“…The main No. 5 2012 contribution to this effect in the considered broken gap quantum wells comes from the BIA terms in the transition operator proportional to the material dependent Kane B parameter [12]. These terms give the interface localized contribution to the optical matrix elements and considerably modify the depen dences of absorption on the transition energy.…”

Section: Optical Anisotropy Of Absorption Coefficientsmentioning

confidence: 99%

“…1. We use the eight band Hamiltonian for the region around the Γ point in the Brillouin zone, (1) which is listed in [12,13] for the set of basis functions…”

Section: Introductionmentioning

confidence: 99%

“…These symmetry breaking mechanisms also result in consid erable anisotropy of dispersion curves for different directions of the quasiparticle in plane wave vector. They change the selection rules for optical transitions for the transitions caused by light linearly polarized along the high symmetry directions such as the [001] growth direction, [10] and [01] directions in the plane of the quantum well if the initial state in plane wave vector is also aligned with the high symmetry direc tions ( [10] or [01]) [12,13]. As a result, the optical matrix elements are nonzero for all the four possible transitions between two spin split subbands 1hh and 2e (or 1e and 2e).…”

Section: Introductionmentioning

confidence: 99%

“…Then the spin flip transitions are for bidden for k || along some high symmetry direction such as [10], [11]. If k || is along a low symmetry direction, for example, [12], then the intensity of the warping induced spin flip processes is negligibly small. Also, the anisotropy of optical matrix elements with respect to different directions of k || is very weak.…”

Section: Introductionmentioning

confidence: 99%

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Optical anisotropy of InAs/GaSb broken-gap quantum wells

Zakharova

Semenikhin

Chao

2012

J. Exp. Theor. Phys.

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General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal Take down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ISSN 1063 7761, Journal of Experimental and Theoretical Physics, 2012, Vol. 114, No. 5, pp. 731-737. © Pleiades Publishing, Inc., 2012 731 1 INTRODUCTIONThe knowledge on optical properties of broken gap heterostructures with InAs/GaSb or similar quantum wells is of great importance because of intensive exper imental investigations on the application of these structures for infrared laser generation. Cascade lasers with multiple quantum wells have been proposed [1] and realized experimentally [2][3][4]. The active region of these devices can contain more than ten stages con sisting of InAs, GaSb, AlSb or other (for example, GaInSb or AlInSb) thin layers. The narrow gap InAs and GaSb layers have two dimensional electron and hole levels between which the optical transitions occur. The wide gap AlSb (AlGaSb, AlInSb) tunnel ing barriers supply the transfer of the carriers through the structure to achieve the population inversion between the electronlike and hole like levels and the laser generation. It was shown that such a laser can operate at temperatures up to 100 K [4].In cascade lasers, the first electron like level in the InAs layer 1e is higher than the first heavy hole like level 1hh in the GaSb layer [5,6]. The separation between them corresponds to the mid infrared energy range for the emitted photons. However, the situation can be different for quantum wells with thicker InAs and GaSb layers. Because of an overlap of the InAs conduction band and the GaSb valence band, the 1e 1 The article is published in the original. level can then be located below the 1hh level at the zone center (with the carrier in plane wave vector k || = 0) [5]. The 1e and 1hh levels anticross and hybridize for k || ≠ 0, which has been observed experimentally [7,8] and studied theoretically [5,[9][10][11]. Laser genera tion in such thicker structures with hybridized elec tron hole states has been also proposed [8]. In this case, the optical transitions exist between the states of the second electron like subband 2e in the InAs layer and the lower hybridized states. These hybridizations can occur between two states (one electron state and one heavy hole state or one electron state and one light hole state). Also, three states (an electron state, a heavy h...

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Section: Introductionmentioning

confidence: 78%

Section: Optical Anisotropy Of Absorption Coefficientsmentioning

confidence: 99%

“…1. We use the eight band Hamiltonian for the region around the Γ point in the Brillouin zone, (1) which is listed in [12,13] for the set of basis functions…”

Section: Introductionmentioning

confidence: 99%