2016
DOI: 10.1016/j.physe.2016.06.003
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Effects of carbon doping on the electronic properties of boron nitride nanotubes: Tight binding calculation

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Cited by 25 publications
(3 citation statements)
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“…According to previous studies [ 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 ], the existence of an external electric field (EF) impacts the geometric structure, substrate–adsorbate interaction, and electrical characteristics. Additionally, the electric field has a significant impact on key sensor properties such as the adsorption energy (E ads ), sensitivity, and recovery time (τ).…”
Section: Introductionmentioning
confidence: 99%
“…According to previous studies [ 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 ], the existence of an external electric field (EF) impacts the geometric structure, substrate–adsorbate interaction, and electrical characteristics. Additionally, the electric field has a significant impact on key sensor properties such as the adsorption energy (E ads ), sensitivity, and recovery time (τ).…”
Section: Introductionmentioning
confidence: 99%
“…16 In BNNTs, the band gap is reduced due to substitution of B/N atoms by carbon atoms, and the doping effects of boron and nitrogensubstituted BNNTs are different. 17 Another type of BCN nanostructure is BN-C hybrids of nanoribbons, which are composed by GNRs embedded in BNNRs. BN-C hybrid nanoribbons have a stable honeycomb configuration 18 and can be synthesized by the CVD methods.…”
Section: Introductionmentioning
confidence: 99%
“…Experimental measurements based on Cathodoluminescence method have estimated values from 5.3 to 5.4 eV [19,20]. Studying the effects of group IV elements on the electronic properties of BNNT's is an attractive subject that many workers have reported many of the structural and electronic properties for C, Si and Ge-doped BNNT in recent years [21][22][23][24][25][26][27][28][29][30][31][32]. However there are not any researches considering the effects of Sn and Pb.…”
Section: Introductionmentioning
confidence: 99%