Effects of cation doping on thermoelectric properties of Bi2S3 materials

Strain‐Mediated Lattice Rotation Design for Enhancing Thermoelectric Performance in Bi2S2Se

“…As a result, an ultra-high maximum figure-of-merit ZT max = 1.13 at 773 K (where ZT is equal to 0.21 for pristine Bi 2 S 2 Se at 773 K) with a high average figure of-merit (ZT ave ) = 0.54 (at 323-773 K) are realized, as shown in Figure 5f and Figure S17 (Supporting Information). The largest ZT obtained here is the record highest ZT reported in n-type Bi 2 S 2 Se mid-temperature range thermoelectric materials [29][30][31][32][33][34][35][36][37][38][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54] (as shown in Figure S17, Supporting Information). Figure S18 (Supporting Information) shows the reproducibility of our high-performance thermoelectric sample.…”

“…The largest PF of ≈7.18 µW cm −1 K −2 (at 773 K) is realized for Bi 2 S 2 Se 0.90 Cl 0.10 : f Sb ( f = 0.10), which the highest value than that of previously reported Bi 2 S 2 Se 1 and Bi 2 S 3 ‐based materials. [ 29–38,40–54 ]…”

“…The largest PF of ≈7.18 µW cm −1 K −2 (at 773 K) is realized for Bi 2 S 2 Se 0.90 Cl 0.10 : fSb (f = 0.10), which the highest value than that of previously reported Bi 2 S 2 Se 1 and Bi 2 S 3 -based materials. [29][30][31][32][33][34][35][36][37][38][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54] The doping-dependent evolution in band structures of the Bi 2 S 2 Se, Cl-doped Bi 2 S 2 Se 1 and Sb-doped Bi 2 S 2 Se 1-x Cl x systems is depicted in Figure 4 and Figures S12, S13 (Supporting Information). The direct bandgap in pristine Bi 2 S 2 Se was evaluated to be 1.15 eV, which is consistent with the reported values.…”