Effects of cationic growth conditions of molecular beam epitaxy on ferromagnetic properties of Mn-doped ZnSnAs₂thin films

Abstract

The effects of cationic growth parameters of molecular beam epitaxy on the crystalline and magnetic properties of Mn-doped ZnSnAs2, (Zn,Sn,Mn)As2, thin films were investigated in order to control ferromagnetism at room temperature. The combination of cationic beam equivalent pressures of Zn, Sn, and Mn atoms was varied at an optimal substrate temperature of 320 °C. Clear hysteresis loops were observed for the samples at 300 K, indicating ferromagnetism at room temperature. We found that the change in Zn flux does not significantly affect the composition of (Zn,Sn,Mn)As2 thin films and ferromagnetic properties and that ferromagnetic properties definitely depend on the amounts of Mn and Sn fluxes. X-ray photoelectron spectroscopy analysis revealed that the sum of the amounts of Mn2+ and Mn4+, which may contribute to the ferromagnetism in (Zn,Sn,Mn)As2 thin films, was approximately 60–70% of the total Mn amount with respect to ferromagnetic (Zn,Sn,Mn)As2 samples. This result indicates that the ferromagnetic properties could be controlled in multilayered (Zn,Sn,Mn)As2 by changing the combination of Zn, Sn, and Mn fluxes.

Epitaxial growth and characterization of Cr-doped ZnSnAs2thin films on InP substrates

“…The special advantage of this ternary compound is that its lattice constant is almost a match to that of InP, which is one of the mainstream semiconductor materials. [10][11][12][13][14][15] In recent years, Mndoped ZnSnAs 2 thin films, (Zn, Mn, Sn)As 2 , have attracted interest because of their ferromagnetic behavior above-roomtemperature in addition to their promise of compatibility with InP-based heterostrutures. 16,17) Through an X-ray fluorescence holographic study using a strong X-ray beam generated by 3rd generation synchrotron radiation at the Spring-8 facility, we have found that Mn atoms occupy both Zn and Sn cation sites.…”