Effects of ceric ammonium nitrate (CAN) additive in HNO<sub>3</sub>solution on the electrochemical behaviour of ruthenium for CMP processes

Lee, W.-J.; Park, H.-S.; Lee, S.-I.; Sohn, HJ

doi:10.1023/b:jach.0000005621.59716.39

Cited by 15 publications

(4 citation statements)

References 7 publications

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“…Cerium ammonium nitrate [Ce(NH 4 ) 2 Ce-(NO 3 ) 6 ] (CAN) dissolved in HNO 3 has recently been used as a etching solution for the semiconductor manufacturing processes and color filter industry. For example, the Ce(IV) from HNO 3 -dissolved CAN may oxidize Ru in chemical mechanical polishing processes [6]. In the color filter industry, the black matrix mainly made by complex chromium materials (Cr/CrO) is commonly used to enhance the color contrast, and the CAN (dissolved in HNO 3 ) is also the major component in the chromium etching (Cr-etch) solutions employed to transfer the pattern of black matrix [7].…”

Section: Introductionmentioning

confidence: 99%

Anion effects on the electrochemical regeneration of Ce(IV) in nitric acid used for etching chromium

Chen

Yeh

Huang

2008

Journal of Hazardous Materials

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Section: Introductionmentioning

confidence: 99%

Anion effects on the electrochemical regeneration of Ce(IV) in nitric acid used for etching chromium

Chen

Yeh

Huang

2008

Journal of Hazardous Materials

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“…One way to enhance the removal rates (RRs) is by modifying its chemical and mechanical properties using oxidizers and complexing agents. So far, while no complexing agents that can enhance the Ru RRs have been identified, several oxidizers [14][15][16][17][18][19][20][21][22][23][24][25] were investigated and it was found that sodium/potassium periodate 19,[22][23][24] and sodium hypochlorite 24 can enhance Ru RRs in alkaline conditions where toxic RuO 4 formation can be avoided. 26 Although dispersions containing these oxidizers are promising for barrier polishing, diffusion of sodium/potassium metal ions into the porous low-K materials that can occur during polishing is not desired.…”

mentioning

confidence: 99%

Role of Guanidine Carbonate and Crystal Orientation on Chemical Mechanical Polishing of Ruthenium Films

Amanapu

Sagi

Teugels

et al. 2013

ECS J. Solid State Sci. Technol.

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Ruthenium (Ru) films deposited on either TiN or TaN/Ta have been proposed as a barrier stack in advanced interconnects. Here, we investigated their polishing behavior using colloidal silica-based slurries containing guanidine carbonate (GC) or hydrogen peroxide (H2O2) or both. Neither GC nor H2O2 alone enhanced the Ru removal rates (RRs) but their combination did, presumably, due to the formation of Ru oxide-guanidinium complexes which can be polished by silica abrasives suggesting that the oxidation of Ru to its oxides is a crucial first step. Ethylenediamine and 2, 2–bipyridine that were reported to form complexes with halides of Ru in various oxidation states also enhanced the RRs of Ru films, similar to GC. Furthermore, even though both types of Ru films were deposited at same conditions, RRs of Ru on TiN were enhanced more compared to those on TaN/Ta, likely a consequence of the difference in the crystalline structure of the oxide films formed due to a difference in the structure of the Ru films themselves. Using X-ray diffraction, X-ray photoelectron spectroscopy, nanoindentation, zeta potential measurements, thermo gravimetric analysis and contact angle measurements, the role of GC and crystalline structure in enhancing the RRs of the films is discussed.

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“…For example, the potential use of ruthenium as bottom electrode capacitor for next-generation DRAM devices [40] has been explored. Owing to the fact that a dry-etch process can lead to the formation of toxic RuO 4 [41], the possibility of using CMP to implement Ru has gained interest recently. The studies in this area have indicated that the formation of stable passive layers such as RuO 2 [41,42] and Ru 2 O 5 [42] are important steps in the Ru CMP.…”

Section: Potassium Permanganate Dichromates and Iodatementioning

confidence: 99%

Key Chemical Components in Metal CMP Slurries

Cheemalapati

Keleher

2007

Microelectronic Applications of Chemical Mechanical Planarization

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Chemical-mechanical planarization (CMP) slurries can be classified into two general categories according to their applications: metal CMP slurry and nonmetal CMP slurry. Two most important metals incorporated into IC chip manufacturing via CMP are W and Cu. Depending upon integration schemes, a metal CMP slurry may or may not carry out the function of removing the film(s) immediately below the overburden metal such as cap, adhesion, and barrier layers. For tungsten CMP, a single-step slurry is typically used to remove both excess tungsten and its barrier/adhesion layer. For copper CMP, after the removal of copper, a subsequent barrier removal step is often required. This chapter reviews the basic requirements for the key components found in common metal slurries.It is generally understood that a metal CMP slurry chemically modifies the surface to be polished and yields a softer and porous complex layer, which is then removed by mechanical force in the process. Although these metals may differ in their physical and chemical properties, the underlying principle for the design of slurries is the same. A production-worthy metal CMP slurry must address several issues, such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), step height reduction efficiency, dishing/erosion, minimum ILD loss, corrosion, scratching, slurry residue, and other surface defects. Typical metal CMP slurry may contain an oxidant, a chelating agent, abrasive particles, a surfactant, and other additives. These components must work in concert to produce adequate material removal rate, high planarization efficiency, and Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Effects of ceric ammonium nitrate (CAN) additive in HNO₃solution on the electrochemical behaviour of ruthenium for CMP processes

Cited by 15 publications

References 7 publications

Anion effects on the electrochemical regeneration of Ce(IV) in nitric acid used for etching chromium

Anion effects on the electrochemical regeneration of Ce(IV) in nitric acid used for etching chromium

Role of Guanidine Carbonate and Crystal Orientation on Chemical Mechanical Polishing of Ruthenium Films

Key Chemical Components in Metal CMP Slurries

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Effects of ceric ammonium nitrate (CAN) additive in HNO3solution on the electrochemical behaviour of ruthenium for CMP processes

Cited by 15 publications

References 7 publications

Anion effects on the electrochemical regeneration of Ce(IV) in nitric acid used for etching chromium

Anion effects on the electrochemical regeneration of Ce(IV) in nitric acid used for etching chromium

Role of Guanidine Carbonate and Crystal Orientation on Chemical Mechanical Polishing of Ruthenium Films

Key Chemical Components in Metal CMP Slurries

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Product

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Effects of ceric ammonium nitrate (CAN) additive in HNO₃solution on the electrochemical behaviour of ruthenium for CMP processes