2006
DOI: 10.1016/j.jcis.2006.01.044
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Effects of cleaning procedures of silica wafers on their friction characteristics

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Cited by 55 publications
(51 citation statements)
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“…Here the friction forces at pH 5.6 were measured to confirm the results of previous experiments [27], as shown in Fig. 6.…”
Section: Resultssupporting
confidence: 85%
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“…Here the friction forces at pH 5.6 were measured to confirm the results of previous experiments [27], as shown in Fig. 6.…”
Section: Resultssupporting
confidence: 85%
“…These experimental results seem to suggest that the silica surface at the normal pH will be highly hydrated but rather solid-like. This is supported also by the result we obtained in the previous study, that is, even an atomic bump on the surface influences the sliding motion between two silica surfaces tremendously at the normal pH [27]. As for the dependence of the friction on the solution pH, we reported recently that the friction is independent of the solution pH and increases linearly with the applied load, when the pH is between 3.6 and 8.6 [28].…”
Section: Introductionsupporting
confidence: 88%
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“…The treatment removed the native oxide layer and produced a new oxidized layer homogeneously terminated by silanol groups. [11] The treated substrates were dried using a dry N 2 flux.…”
Section: Substrate and Film Preparationmentioning
confidence: 99%
“…Wafers were cleaned separately using the Remote Chemical Analysis (RCA) cleaning technique. 21 Briefly, wafers were cleaned with 1 part 27% ammonium hydroxide (Fisher Scientific, Fairlawn, NJ) and 1 part 30% hydrogen peroxide (Fisher) in 5 parts of deionized water at 70°C for 15 minutes, followed by a 5 minute wash in deionized water. A second cleaning, consisting of 1 part 27% hydrochloric acid (Fisher) and 1 part 30% hydrogen peroxide in 6 parts of water at 70°C, was done for 15 minutes.…”
Section: Photolithographymentioning
confidence: 99%