Effects of Co for Mn substitution on the electronic properties of Mn2-xCoxVAl as probed by XPS

Effects of Interfacial Termination, Oxidation, and Film Thickness on the Magnetic Anisotropy in Mn2.25Co0.75Ga0.5Sn0.5/MgO Heterostructures

“…For example, the first reported SGS material was just obtained by substituting Co for Pd in PbPdO 2 . According to the previous studies, the doping of transition metal and s–p elements usually has a different effect on the control of the band structure. − In order to develop a new SGS material, we propose to dope transition metal and s–p elements in half-metals, nearly half-metals, or magnetic semiconductors. In fact, the band structures of half-metals, SGSs, and magnetic semiconductors are continuously transitional, as shown in Figure S1, indicating that it is highly possible to achieve one of them by doping the other one.…”

Reduction of the substitutional disorder by heat treatments in Mn2-xCoxVAl Heusler alloys

“…The second order parameter S L21 describes the probability of V to occupy the Y position in the X 2 YZ full Heusler alloys: Table 1. Previously we have shown that any changes of these parameters will significantly influence the magnetic and electronic properties of Mn 2-x M x VAl (M = Co or Cu) Heusler systems [6,7]. As can be seen in Table 1, a substantial degree of mixing between the V and Al is present in all our samples.…”

“…The presence of a considerable atomic disorder in the Mn2VAl compound due to the intermixing of the V and Al atoms has been reported [5]. Previous studies have shown that the magnetic properties and the half-metallic character of these Heusler alloys are strongly influenced by the crystallographic disorder [1,3,6,7]. The aim of the present work is to reduce the substitutional disorder by heat treatments in Mn 2−x Co x VAl Heusler alloys.…”

Distinct impact of order degree on thermoelectric power factor of p-type full-Heusler Mn2VAl compounds

“…Our previous work revealed that a half-metallic full-Heusler Mn 2 VAl compound is a promising p-type TE material [17]. Compared with other full-Heusler compounds, the Mn 2 VAl compound has an advantage that it can be easily prepared by various methods such as arc-melting [17,[19][20][21], spark-plasmasintering (SPS) [17], induction-melting [22,23], and ultra-high-vacuum magnetron sputtering technique [24][25][26]. A disadvantage of the Mn 2 VAl compound is its low PF=2.7×10 −4 Wm −1 K −2 at 717 K [17], being inferior to an n-type half-metallic full-Heusler Co 2 MnSi compound (2.9×10 −3 Wm −1 K −2 at 550 K [16]).…”