Abstract:Highlights• Cobalt doping into SnO2 samples grown successfully by SILAR method.• The bandgap of SnO2 was red-shifted due to Co doping.• The PL emission intensity can be controlled by cobalt content in the SnO2 lattice.• Co ions were efficiently incorporated into host SnO2 structure.• Semiconductor nature of samples was reported in the electrical characterization.
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