Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT

An, Yunlai; Zhang, Wenting; Tang, Xingfu; Niu, Xiping; Wang, Liang; Yang, Xiaolei; Shen, Zhenxi; Sun, Jiaopeng; Sang, Ling; Li, Rui; Du, Zechen; Luo, Weixia; Li, Ling; Chen, Zhongyuan; Wei, Xiaoguang; Yang, Fei

doi:10.1016/j.jcrysgro.2023.127083

Journal of Crystal Growth

2023

DOI: 10.1016/j.jcrysgro.2023.127083

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Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT

Yunlai An¹,

Wenting Zhang²,

Xingfu Tang³

et al.

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2024

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Cited by 2 publications

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All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves

Cao,

Wang,

Huang

et al. 2024

IEEE Trans. Device Mater. Relib.

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All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves

Cao,

Wang,

Huang

et al. 2024

IEEE Trans. Device Mater. Relib.

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Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC

Yuan,

Pei,

et al. 2024

Micromachines

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In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot wall chemical vapor deposition reactor. Comparing C3H8 and C2H4 as C sources, the sample grown with C2H4 exhibited a slower growth rate and lower doping concentration, but superior uniformity and surface roughness compared to the C3H8-grown sample. Hence, C2H4 is deemed more suitable for commercial epitaxial wafer growth. Increasing growth pressure led to decreased growth rate, worsened thickness uniformity, reduced doping concentration, deteriorated uniformity, and initially improved and then worsened surface roughness. Optimal growth quality was observed at a lower growth pressure of 40 Torr. Furthermore, the impact of buffer layer growth on epitaxial quality varied significantly based on different C/Si ratios, emphasizing the importance of selecting the appropriate conditions for subsequent device manufacturing.

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Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT

Cited by 2 publications

References 11 publications

All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves

All-Regions Damage Extraction Method for SiC IGBTs Based on C-V Curves

Research on the Influence of Carbon Sources and Buffer Layers on the Homogeneous Epitaxial Growth of 4H-SiC

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