Effects of controllable biaxial strain on the Raman spectra of monolayer graphene prepared by chemical vapor deposition

Jie, Wenjing; Hui, Yeung Yu; Zhang, Yang; Lau, Shu Ping; Hao, Jianhua

doi:10.1063/1.4809922

Cited by 48 publications

(37 citation statements)

References 26 publications

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“…Thus, the possibility of a blue shift by the charge doping effect was thought to be less than that by the strain effect. Similar to previous reports on Raman shifts as a result of biaxial strain [29][30][31], the sensitivity of the 2D peak to thermally generated strain (∂ω 2D /∂ω) was approximately double that of the G peak (∂ω G / ∂ω), and the 2D peak shapes did not change. The only difference was that neither peak was linearly shifted.…”

Section: Figuresupporting

confidence: 87%

Materialization of strained CVD-graphene using thermal mismatch

Lee

Kim

et al. 2015

Nano Res.

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Theoretical physics foretells that "strain engineering" of graphene could hold the key to finding treasures still hidden in two-dimensional (2D) condensed matter physics and commercializing graphene-based devices. However, to produce strained graphene in large quantities is not an easy task by any means. Here, we demonstrate that thermal annealing of graphene placed on various substrates could be a surprisingly simple method for preparing strained graphene with a large area. We found that enhanced graphene-substrate interfacial adhesion plays a critical role in developing strained graphene. Creative device architectures that consider the thermal mismatch between graphene and the target substrate could enable the resulting strain to be intentionally tailored. We believe that our proposed method could suggest a shortcut to realization of graphene straintronics.As a promising material for future electronic devices, graphene has come into the spotlight in diverse fields and is being developed at a relentless pace [1, 2]. Many researchers are endeavoring to find treasures hidden in the "flatland" today. However, despite many efforts, the emergence of commercial graphenebased applications still seems unattainable. Moreover, professional skepticism regarding the applicability of graphene applications, particularly prevalent among the scientific community's doyens, is increasing. Therefore, a technological breakthrough is truly needed to change the current atmosphere. In the early 1980s,

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Section: Figuresupporting

confidence: 87%

Materialization of strained CVD-graphene using thermal mismatch

Lee

Kim

et al. 2015

Nano Res.

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“…The recently developed method of electric-field controlled strain has previously been applied to modulate transport, magnetic, and optical behaviors of various material systems24252627. Here, such a strategy can provide us a unique opportunity to in situ modulate the NIR PL of STO:Ni thin film in a real-time and reversible way.…”

Section: Resultsmentioning

confidence: 99%

Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering

Bai

Zhang

Hao

2014

Sci Rep

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We report the tunable near-infrared luminescence of Ni2+ doped SrTiO3 (STO:Ni) thin film grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) substrate via strain engineering differing from conventional chemical approach. Through controlling the thickness of STO:Ni film, the luminescent properties of the films including emission wavelength and bandwidth, as well as lifetime can be effectively tuned. The observed phenomena can be explained by the variation in the crystal field around Ni2+ ions caused by strain due to the lattice mismatch. Moreover, the modulation of strain can be controlled under an external electric field via converse piezoelectric effect of PMN-PT used in this work. Consequently, controllable emission of the STO:Ni thin film is demonstrated in a reversible and real-time way, arising from the biaxial strain produced by piezoelectric PMN-PT. Physical mechanism behind the observation is discussed. This work will open a door for not only investigating the luminescent properties of the phosphors via piezoelectric platform, but also potentially developing novel planar light sources.

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“…[16][17][18] In this device architecture, local strain was also induced or measured taking advantage of scanning probe techniques. 19,20 Differently, uniform biaxial strain configurations could be induced by taking advantage of piezoelectric effects in the substrate 21 and by using pressure transmitting media. 22 Concerning uniaxial strain, various studies have demonstrated the possibility to anisotropically deform graphene deposited on nonflat substrates, 23 on polydimethylsiloxane (PDMS) 24 or on similar stretchable substrates.…”

mentioning

confidence: 99%

Anisotropic straining of graphene using micropatterned SiN membranes

et al. 2016

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We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load ∆P over elliptical regions of free-standing graphene yields measurable deviations from hydrostatic strain conventionally observed in radially-symmetric microbubbles. The top hydrostatic strain ε we observe is estimated to be ≈ 0.7% for ∆P = 1 bar in graphene clamped to elliptical SiN holes with axis 40 and 20 µm. In the same configuration, we report a G± splitting of 10 cm −1 which is in good agreement with the calculated anisotropy ∆ε ≈ 0.6% for our device geometry. Our results are consistent with the most recent reports on the Grüneisen parameters. Perspectives for the achievement of arbitrary strain configurations by designing suitable SiN holes and boundary clamping conditions are discussed.

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Effects of controllable biaxial strain on the Raman spectra of monolayer graphene prepared by chemical vapor deposition

Cited by 48 publications

References 26 publications

Materialization of strained CVD-graphene using thermal mismatch

Materialization of strained CVD-graphene using thermal mismatch

Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering

Anisotropic straining of graphene using micropatterned SiN membranes

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