Effects of coupling on the structural properties of InxGa1−xAs/GaAs 1-D and 0-D self-organized quantum structures

Taurino, A.; Catalano, M.; Giorgi, Milena De; Passaseo, A.; Cingolani, R.

doi:10.1016/s0921-5107(01)00722-x

Cited by 3 publications

(2 citation statements)

References 12 publications

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“…The dark feature is attributive to indium segregation as the deposition of 10 nm thick In 0.1 Ga 0.9 As capping layer is followed by GaAs spacer of high growth temperature (T s = 645 • C). The presence of indium adatoms floating to the surface is normally observed in the growth of III-V compound semiconductor heterostructures [24][25][26][27]. The nonuniform feature of indium distribution might suggest the possible existence of double QDs and/or columnar QDs in each 10 nm QDs layer.…”

Section: Epitaxial Growthmentioning

confidence: 94%

Coupled InGaAs Quantum Dots for Electro-Optic Modulation

2021

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We investigated the growth of vertically coupled In0.75Ga0.25As quantum dots (QDs) by varying the GaAs spacer thickness (d). Vertically-aligned triple-layer QDs of uniform size and highest accumulated strain are formed with d = 5 nm. The electroluminescence (EL) characteristics for In0.75Ga0.25As QDs show an emission spectrum at optical wavelength (λ) of 1100−1300 nm. The EL spectra exhibit the highest optical gain at λ ~ 1200 nm, and the narrowest FWHM = 151 nm of the sample with d = 5 nm at injection current = 20 mA. Fabry–Perot measurements at λ = 1515 nm of TE and TM polarizations were carried out to investigate the electro-optic modulation for a single-mode ridge waveguide consisting of vertically-coupled triple-layer In0.75Ga0.25As QDs (d = 5 nm). The linear (r) and quadratic (s) electro-optic coefficients are r = 2.99 × 10−11 m/V and s = 4.10 × 10−17 m2/V2 for TE polarization, and r = 1.37 × 10−11 m/V and s = 3.2 × 10−17 m2/V2 for TM polarization, respectively. The results highlight the potential of TE/TM lightwave modulation by InGaAs QDs at photon energy below energy band resonance.

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Section: Epitaxial Growthmentioning

confidence: 94%

Coupled InGaAs Quantum Dots for Electro-Optic Modulation

2021

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“…In general, a stacking of quantum dots in several layers can particularly be achieved by a strained surface of the GaAs intralayer (see, e.g., [36][37][38]). The vertical alignment of the QDs in the different InAs planes depends on the thickness of this GaAs spacer, for a thickness up to about 6 nm a direct correlation of the positions can be observed.…”

Section: (Inga)as Quantum Dots On Gaasmentioning

confidence: 99%

Structural and chemical characterization of nanostructured III – V compound semiconductors by analytical TEM

Schneider¹

2009

Zeitschrift Für Kristallographie

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The paper reports structural and microchemical investigations of low-dimensional semiconducting materials by combined imaging and spectroscopical techniques of transmission electron microscopy (TEM). The materials systems under investigation comprise graded (Al,Ga)As layers, (In,Ga)As quantum wires in V-grooved (001)InP, and (In,Ga)As quantum dots in GaAs. In order to elucidate structural peculiarities of these objects conventional and high-resolution TEM (CTEM/HRTEM) were performed, whereas information about the chemical composition and element distribution was obtained through electron energy loss spectroscopy (EELS), energyfiltered TEM (EFTEM), and energy-dispersive X-ray spectroscopy (EDXS). Particularly, the application possibilities of EFTEM are here demonstrated for revealing the local element content at high lateral resolution in a semi-quantitative manner.

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A novel biobased resin‐epoxidized soybean oil modified cyanate ester

Zhan

Zhao

et al. 2008

Polymer Engineering & Sci

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Cyanate ester (CE) resin was modified with renewable resource, i.e. epoxidized soybean oil (ESO), and the effects of ESO content on the curing co-reaction, morphologies, water absorption behaviors, thermal and mechanical properties of CE/ESO blends were studied. Differential scanning calorimeter (DSC), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and dynamic mechanical analysis (DMA) were employed to characterize the ESO-modified CE polymer networks. Homogeneous structures were observed for low-content of ESO modified CE systems by SEM, while ESO-rich particles were observed in the modified systems with ESO above 15 wt %. The blend of the CE and ESO resulted in an excellent combination as a new biobased thermoset material having relatively high mechanical properties with 15 and 20 wt % ESO as replacement of CE. Enhanced elongations at break were observed for the modified systems while the tensile strengths kept about the same level at the same time. The storage moduli and glass transition temperatures of the modified systems in the glassy state and rubber plateau were observed to be lower than those of neat CE with the increase of ESO weight percent.

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Effects of coupling on the structural properties of InxGa1−xAs/GaAs 1-D and 0-D self-organized quantum structures

Cited by 3 publications

References 12 publications

Coupled InGaAs Quantum Dots for Electro-Optic Modulation

Coupled InGaAs Quantum Dots for Electro-Optic Modulation

Structural and chemical characterization of nanostructured III – V compound semiconductors by analytical TEM

A novel biobased resin‐epoxidized soybean oil modified cyanate ester

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