Effects of Crossed Magnetic Fields on Silicon Particles in Plasma Chemical Vapor Deposition Process

Abstract

In order to realize the preparation of large-area uniform hydrogenated amorphous silicon thin films for solar cells underdust particle-free process conditions, the scanning plasma method (SPM) using a crossed magnetic field has been investigated to remove silicon particles produced in silane discharge. The silicon particles collected on the substrates were observed by scanning electron microscopy (SEM) to identify the crossed magnetic field effects on particle removal and suppression in the present SPM process. In this paper, the relationship between the externally applied crossed magnetic field and the particle behavior in silane plasma are reviewed from the viewpoint of particle removal and suppression.

Dynamics of dust particles in the glow discharge stratum in crossed E × B field

“…So, magnetized plasma represents a method of cleaning from dust particles in the preparation of electronic devices. [ 8 ]…”

“…So, magnetized plasma represents a method of cleaning from dust particles in the preparation of electronic devices. [8] Under laboratory conditions, intensive research on the properties of the dust structure in a magnetic field is also underway. The majority of the groups in the experiment are focused on studying some fundamental questions such as charging, the formation of different dust forms, waves, and so forth in longitudinal weak [9,10] and strong magnetic fields.…”

The influence of external magnetic field on the structural and optical properties of nanocrystalline ZnO thin films prepared by dip coating method

“…In some cases, magnetic field is essential and part of the mechanism, e. g. magnetron sputtering [25][26][27][28][29][30][31]. In other cases, magnetic field played a role of external factor that influenced the growth of thin films such as depositions from ionic solutions [32][33][34], different types of electro deposition [35][36][37][38][39], redox deposition [40][41][42], electrophoresis [43], as well as influencing particles in the plumes produced in pulsed-laser depositions [44][45][46][47], and alterations of the plasma in plasma enhanced chemical vapor deposition processes [48][49][50][51].…”