2015
DOI: 10.1179/1432891715z.0000000001804
|View full text |Cite
|
Sign up to set email alerts
|

Effects of Cu doping on the surface morphology, microstructure and photoluminescent characteristics of ZnO films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2019
2019
2019
2019

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(2 citation statements)
references
References 8 publications
0
2
0
Order By: Relevance
“…The reduction of rods size at lowest concentration of MgO-dopant attributed to the moderate amount of doping which promote the growth of crystal plane and assist dopant atoms to be orderly incorporated into a ZnO lattice. In contrast, excess doping restricts the function of the dopant in the ZnO [27,28]. The elemental composition of 0.5ZNO sample is confirmed by EDX analysis which revealed the presence of elements Zn, O and Mg as can be observed in Figure 2.The EDX data of weight % and atomic % for each element in 0.5ZNO sample are listed in Table 2.…”
Section: Field Emission Scanning Electron Microscope (Fe-sem) Studymentioning
confidence: 68%
See 1 more Smart Citation
“…The reduction of rods size at lowest concentration of MgO-dopant attributed to the moderate amount of doping which promote the growth of crystal plane and assist dopant atoms to be orderly incorporated into a ZnO lattice. In contrast, excess doping restricts the function of the dopant in the ZnO [27,28]. The elemental composition of 0.5ZNO sample is confirmed by EDX analysis which revealed the presence of elements Zn, O and Mg as can be observed in Figure 2.The EDX data of weight % and atomic % for each element in 0.5ZNO sample are listed in Table 2.…”
Section: Field Emission Scanning Electron Microscope (Fe-sem) Studymentioning
confidence: 68%
“…From the Tauc plot, the band gap energy of the samples is found to be between 3.23 eV to 3.26 eV as tabulated in Table 3. The presence of dopant causes the changes in the band gap energy which modifying the energy level [28]. It is observed that the increase of concentration of MgO dopant in ZnO resulted in a decrease of band gap energy.…”
Section: Band Gap Studies Using Uv-vis Spectrophotometermentioning
confidence: 99%