“…To optimize ρ and k, specific microstructure, which includes various defects with desired properties, shape, size, dimensionality and etc., is usually formed via various approaches and ways of defect engineering [2][3][4][5]. Elemental doping is one of fruitful ways that is often applied to optimally tune the transport properties and, hence, enhance thermoelectric efficiency of material [6][7][8][9][10][11][12][13][14][15]. Dopant atoms can behave as donor or acceptor centres, resulting in reducing in ρ and enhancing in the electronic contribution to k. Besides, dopant atoms are effective scattering centres for electrons and phonons, resulting in enhancing in ρ and reducing in the phonon contribution to k, respectively.…”