2021
DOI: 10.1103/physrevmaterials.5.125401
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Effects of Cu doping on thermoelectric properties of Al–Si–Ru semiconducting quasicrystalline approximant

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Cited by 3 publications
(3 citation statements)
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“…Based on the study of these electronic rules, we have recently discovered a semiconducting 1/0 approximant in the ternary Al–Si–Ru system . We also found that this approximant is promising as a thermoelectric material for low-temperature waste-heat recovery . These results suggest that the realization of semiconducting quasicrystals will lead to a greater thermoelectric performance than conventional semimetallic quasicrystals.…”
Section: Introductionmentioning
confidence: 73%
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“…Based on the study of these electronic rules, we have recently discovered a semiconducting 1/0 approximant in the ternary Al–Si–Ru system . We also found that this approximant is promising as a thermoelectric material for low-temperature waste-heat recovery . These results suggest that the realization of semiconducting quasicrystals will lead to a greater thermoelectric performance than conventional semimetallic quasicrystals.…”
Section: Introductionmentioning
confidence: 73%
“…11 We also found that this approximant is promising as a thermoelectric material for low-temperature waste-heat recovery. 28 These results suggest that the realization of semiconducting quasicrystals will lead to a greater thermoelectric performance than conventional semimetallic quasicrystals. The next step for understanding the electronic structure of semiconducting quasicrystals is to clarify the mechanism of forming a band gap on a semiconducting approximant with a higher degree of approximation, such as the 1/1 approximant.…”
Section: ■ Introductionmentioning
confidence: 94%
“…To optimize ρ and k, specific microstructure, which includes various defects with desired properties, shape, size, dimensionality and etc., is usually formed via various approaches and ways of defect engineering [2][3][4][5]. Elemental doping is one of fruitful ways that is often applied to optimally tune the transport properties and, hence, enhance thermoelectric efficiency of material [6][7][8][9][10][11][12][13][14][15]. Dopant atoms can behave as donor or acceptor centres, resulting in reducing in ρ and enhancing in the electronic contribution to k. Besides, dopant atoms are effective scattering centres for electrons and phonons, resulting in enhancing in ρ and reducing in the phonon contribution to k, respectively.…”
Section: Introductionmentioning
confidence: 99%