Effects of dc bias on dielectric relaxations in CaCu3Ti4O12 ceramics

Grain boundary engineering that induces ultrahigh permittivity and decreased dielectric loss in CdCu3Ti4O12 ceramics

“…Here, the activation energy E gb is physically understood to be the potential barrier height at the grain boundaries. 12,33,45 These E gb values of the CdCu 3−x Zn x Ti 4 O 12 ceramics (E gb ~ 0.75-0.85 eV) are comparable to those reported for other ACTO-type ceramics. [15][16][17][18]46,47 According to the IBLC model, double Schottky barriers from n-type grains to insulating grain boundaries, and vice versa, can form.…”

“…Specifically, the E gb values for the CdCu 3− x Zn x Ti 4 O 12 ceramics where x = 0.00, 0.01, 0.02, 0.04, 0.06, 0.08, and 0.10 are 0.80 ± 0.02, 0.80 ± 0.02, 0.79 ± 0.02, 0.81 ± 0.01, 0.84 ± 0.01, 0.85 ± 0.02 and 0.81 ± 0.02 eV, respectively, as shown in Figure D. Here, the activation energy E gb is physically understood to be the potential barrier height at the grain boundaries . These E gb values of the CdCu 3− x Zn x Ti 4 O 12 ceramics ( E gb ~ 0.75‐0.85 eV) are comparable to those reported for other ACTO‐type ceramics .…”

“…The search for ultrahigh permittivity ( ε r > 10 3 ) materials is one of the most popular research topics in the fields of microelectronics and energy storage devices . CaCu 3 Ti 4 O 12 (CCTO), a typical ACu 3 Ti 4 O 12 (ACTO, where A = Ca, Cd, La 2/3 , Y 2/3 , Bi 2/3 , Na 1/2 La 1/2 , Na 1/2 Y 1/2 , or Na 1/2 Bi 1/2 , for example) ceramic, has been widely studied due to its ultrahigh dielectric permittivity and good frequency/thermal stability. However, other members of the ACTO family with isostructures have rarely been studied.…”

Enhanced dielectric properties with a significantly reduced loss tangent in (Mg2+, Al3+) co-doped CaCu3Ti4O12ceramics: DFT and experimental investigations

“…Nowadays, simple and complex oxides with their unique physical properties can be converted to essential electronic manufacturing elements to produce a variety of electronic devices. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] The development of complex perovskites for use in materials for energy storage applications has been extensively reported over the past ten years. [1][2][3][4][5][6][7][8][9][10][11][12]20 One of the many improvements of ceramic dielectrics and related materials is used as the capacitive components of capacitors.…”

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] The development of complex perovskites for use in materials for energy storage applications has been extensively reported over the past ten years. [1][2][3][4][5][6][7][8][9][10][11][12]20 One of the many improvements of ceramic dielectrics and related materials is used as the capacitive components of capacitors. However, almost all ceramic capacitors are produced using ferroelectric materials such as PbTiO 3 .…”