The
defect engineering of two-dimensional (2D) materials has become
a pivotal strategy for tuning the electrical and optical properties
of the material. However, the reliable application of these atomically
thin materials in practical devices require careful control of structural
defects to avoid premature failure. Herein, a systematic investigation
is presented to delineate the complex interactions among structural
defects, the role of thermal mismatch between WS2 monolayer
and different substrates, and their consequent effect on the fracture
behavior of the monolayer. Detailed microscopic and Raman/PL spectroscopic
observations enabled a direct correlation between thermal mismatch
stress and crack patterns originating from the corner of faceted voids
in the WS2 monolayer. Aberration-corrected STEM-HAADF imaging
reveals the tensile strain localization around the faceted void corners.
Density functional theory (DFT) simulations on interfacial interaction
between the substrate (Silicon and sapphire -Al2O3) and monolayer WS2 revealed a binding energy between
WS2 and Si substrate is 20 times higher than that with
a sapphire substrate. This increased interfacial interaction in WS2 and substrate-aided thermal mismatch stress arising due to
difference in thermal expansion coefficient to a maximum extent leading
to fracture in monolayer WS2. Finite element simulations
revealed the stress distribution near the void in the WS2 monolayer, where the maximum stress was concentrated at the void
tip.