Effects of different incidence rates of carbon and silicon clusters on the surface properties of SiC films

Bian, Zhetian; Gao, Tinghong; Liu, Yutao; Gao, Yue; Huang, Jin; Xie, Quan; Chen, Qian

doi:10.1016/j.surfin.2023.102718

Cited by 3 publications

(4 citation statements)

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“…Film density is paramount in materials science and engineering applications because it can affect the physical properties and behavior of a film; it can be expressed as follows , : where m denotes the film mass and L x , L y , and L z denote the film length, width, and thickness, respectively. The densities of the GaN thin films deposited on different substrate surfaces were investigated (Figure b).…”

Section: Resultsmentioning

confidence: 99%

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Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Mao,

Gao,

et al. 2024

Crystal Growth & Design

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Gallium nitride (GaN) is frequently used as the primary material for manufacturing high-brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become increasingly prevalent across microelectronics, optoelectronics, and nanotechnology as a method for thin-film growth. Gaining insights into the process of thin-film growth can significantly enhance the device performance. Herein, molecular dynamics was used to simulate GaN thin film growth on substrates with different patterned surfaces. Results showed that GaN thin films grown on cone- and dome-patterned substrate surfaces have smoother surfaces than those grown on a flat substrate. Moreover, the GaN thin films grown on flat surfaces exhibited an optimal crystalline quality compared to those grown on patterned substrate surfaces. However, the GaN thin films grown on flat surfaces showed strain levels higher than those grown on patterned substrate surfaces, potentially affecting the performance of the optoelectronic devices. This study reveals the impact of different patterned substrate surfaces on GaN thin films and provides guidance on the design of substrate patterns for different GaN thin film application scenarios.

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Section: Resultsmentioning

confidence: 99%

“…According to Figure 4a, the variation in the substrate patterns results in distinct critical thicknesses. Film density is paramount in materials science and engineering applications because it can affect the physical properties and behavior of a film; it can be expressed as follows 30,34 :…”

Section: Resultsmentioning

confidence: 99%

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Mao,

Gao,

et al. 2024

Crystal Growth & Design

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“…In the field of crystal simulation growth, most of the researches have focused on the growth of thin films with heteroepitaxial GaAs [12][13][14][15][16][17][18], GaAs as substrates [19][20][21][22][23][24][25], and silicon carbide third-generation semiconductors [26][27][28][29]. However, heteroepitaxial growth encounters problems, such as lattice mismatch [30] and thermal adaptation, affecting the film growth, whereas homoepitaxial growth [31] can solve such problems.…”

Section: Introductionmentioning

confidence: 99%

Effects of A s
Tian,
Chen,
Bian
et al. 2024
J. Phys.: Condens. Matter
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Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to form As8 clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the deposition and growth of GaAs crystal films were performed. Additionally, the deposition and growth of GaAs thin films were simulated using molecular dynamics. The influence of As8 clusters on the surface morphology and internal structure of GaAs films at different incidence angles, velocities and substrate temperatures was studied by using "defect analysis technology" and "diamond structure identification" in open source software, along with surface roughness and radial distribution function. Results show that with increasing incident angle, the number of As8 clusters decreases and film density increases. Increasing incident velocity increases the irregular movement of As8 clusters in air, and their deposition on the film surface affects the morphology of the film, the surface roughness increases first and then decreases. Additionally, we investigated the effect of different substrate temperatures on the film surface. Results show that at a substrate temperature of 1173 K, the number of As8 clusters in the film decreases or the As8 clusters disappear, heterogeneous nucleation occurs in the film, and the crystallization rate increases. Although the dislocation line associated with nucleation may affect the mechanical and optical properties of the film, it considerably reduces the annealing effort after the deposition and growth.

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“…With the advancement of computer technology, computational simulations have emerged as a primary method for studying crystal growth at the microscale. − Molecular dynamics simulations enable the modeling of crystal growth environments under various conditions, allowing observation of defect evolution during growth and investigation of crystal quality and performance postgrowth. − This study primarily utilizes molecular dynamics simulations to explore the growth mechanisms of SiC crystals, with a focus on the temperature-dependent growth rates of zinc blende and wurtzite structures and the evolution of defects influenced by twinning. Through detailed computations and visualizations, this paper delineates the dynamic nature of defect formation and discusses the characteristics of defect evolution across different crystal structures.…”

Section: Introductionmentioning

confidence: 99%

Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations

Liu,

Gao,

Huang

et al. 2024

J. Phys. Chem. B

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Silicon carbide (SiC), a third-generation semiconductor material, is pivotal for applications in new energy vehicles, aerospace, and high-speed electronics, owing to its superior properties. This study delves into the twin-induced growth behaviors of SiC crystals through molecular dynamics simulations at temperatures ranging from 2700 to 3200 K. It focuses on the wurtzite and zinc blende SiC structures, revealing dynamic defect behavior during growth, including an initial rise and subsequent decrease in vacancies, with particular emphasis on prevalent defects within zinc blende twin layers. A significant finding is the direct correlation between temperature and growth rates across different SiC structures, highlighting temperature control as essential for optimizing crystal quality. Furthermore, this work contributes to the analysis of the interactions of twin layers and their impact on structural stability and defect formation in SiC crystals. The insights gained here have substantial implications for the semiconductor industry, potentially enhancing device performance by better controlling growth conditions and defect management in SiC-based electronic and optoelectronic devices.

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Effects of different incidence rates of carbon and silicon clusters on the surface properties of SiC films

Cited by 3 publications

References 38 publications

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Effects of A s
Tian,
Chen,
Bian
et al. 2024
J. Phys.: Condens. Matter
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0
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Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations

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Effects of different incidence rates of carbon and silicon clusters on the surface properties of SiC films

Cited by 3 publications

References 38 publications

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces

Effects of A sTian, Chen, Bian et al. 2024J. Phys.: Condens. Matter0000View full textAdd to dashboardCite

Exploring Defect Dynamics and Twin-Layer Interactions in SiC Crystals through Molecular Simulations

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Effects of A s
Tian,
Chen,
Bian
et al. 2024
J. Phys.: Condens. Matter
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0
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