Effects of Different Oxide Thicknesses on the Characteristics of CNTFET

Hadi, Muhammad; Hussin, H.; Muhamad, Mohd Razali; Soin, Norhayati; Wahab, Yasmin Abdul

doi:10.1109/rsm52397.2021.9511584

Cited by 8 publications

(4 citation statements)

References 14 publications

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“…Furthermore, the values of on-current (Ion) and subthreshold leakage current(Ioff) were determined based on the IV graph. As the value of Ion can be extracted at Vgs = Vdd and Ioff at Vgs = 0 V, 7,9 the device with the best performance can be obtained by having a high Ion/Ioff ratio value. This condition needs the highest possible value of Ion while having the lowest value of Ioff.…”

Section: Simulation Analysis and Resultsmentioning

confidence: 99%

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The Impact of Variation in Diameter and Dielectric Materials of the CNT Field-Effect Transistor

Hadi¹,

Hussin²,

Soin³

2022

ECS J. Solid State Sci. Technol.

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In today’s semiconductor industry, transistor size has been continuously scaled down due to the competition between developers to provide a better performance device. Based on Moore’s Law, the use of metal oxide semiconductor field-effect transistor (MOSFET) technology might end due to its dimensional limitation, which affects its performance. Carbon nanotube field-effect transistor (CNTFET) has become a good candidate to replace MOSFET technology due to its carbon nanotube properties (CNT). In the CNTFET design parameters, the changes in the diameter of CNT and the dielectric materials of the oxide layer significantly affect the transistor’s performance. The results show that by increasing the diameter of CNT and having a higher dielectric constant material, the on-current (Ion) and the transconductance, gm of the CNTFET will significantly increase. This effect will produce a device with a higher current ratio (Ion/Ioff) and provide a better device performance. The study also included the effect of this design parameter on the channel’s average electron velocity. From this study, it can be deduced that the diameter of CNT and the dielectric material of the oxide layer greatly affect the transistor’s performance.

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Section: Simulation Analysis and Resultsmentioning

confidence: 99%

“…The simulation was executed using the CNTFET lab tools in nanoHUB.org. 7 One of the CNTFET lab tools is the FETToy 2.0 simulator used to simulate the CNTFET design, as shown in Fig. 2.…”

Section: Methodsmentioning

confidence: 99%

The Impact of Variation in Diameter and Dielectric Materials of the CNT Field-Effect Transistor

Hadi¹,

Hussin²,

Soin³

2022

ECS J. Solid State Sci. Technol.

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“…The larger the diameter will produce a larger on-current. Another study is involving the change in the thickness of the oxide layer in the GAA CNTFET [18,19]. The research concludes that the Ion of the CNTFET decreased as the oxide layer increased.…”

Section: Designing the Cntfetmentioning

confidence: 99%

Optimized design of carbon nanotube field-effect transistor using Taguchi method for enhanced current ratio performance

Abdul Hadi,

Hussin,

Muhamad

et al. 2024

Phys. Scr.

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Presently, the integrated circuit (IC) industry grapples with obstacles in downsizing MOSFET technology further, hindered by its inherent physical constraints. Therefore, the substitution of silicon with carbon nanotubes (CNTs) holds promise for paving a novel path in semiconductor industries, driven by their diminutive dimensions and superior electrical properties. Hence, this project employed SILVACO ATLAS software in conjunction with the Taguchi method to refine a CNTFET design for optimal performance. In this work, response variables consists of on-current (Ion), current ratio (Ion/Ioff) and threshold voltage (Vth) are extracted. In this particular design, the Taguchi method was employed to ascertain the most effective combination of design parameters and materials to achieve optimal CNTFET performance, as assessed by the three key response variables. The design parameter and material that had been chosen were the diameter of carbon nanotube (Dcnt), dielectric material (K) and oxide thickness (tox). Each of the design parameters and material had three different values. For K, the values are 3.9 (SiO2), 25 (ZrO2) and 80 (TiO2). While for Dcnt and tox, the values are 4.0 nm, 6.0 nm, 8.0 nm and 2.0 nm, 4.0 nm, 6.0 nm respectively. According to the Taguchi optimization findings, the ideal combination of parameters comprises a CNT diameter of 4.0 nm, an oxide thickness of 2.0 nm, and the use of TiO2 (80) as the dielectric material. The ANOVA analysis underscores the significance of prioritizing optimization efforts towards the CNT diameter parameter. This is attributed to its substantial contribution, accounting for 93.55% of the variation in the Ion/Ioff value, surpassing the influence of dielectric materials and oxide thickness.

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“…The current mobility, dielectric, and conductivity are highly influenced by the change in parameters of CNT devices. Physical parameters like chirality, channel length, diameter, pitch, gate length, gate width, oxide thickness, supply voltage, and number of tubes influence the performance of CNTFET [4,5].…”

Section: Literature Reviewmentioning

confidence: 99%

Performance Optimization of Carbon Nano-Tube Field Effect Transistors by Tuning Parameters

Saini

Rajput

Choi

2022

J. Electron. Electric. Eng.

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As transistors are scaled down to keep up with Moore's law, the semiconductor industry is facing several challenges due to the limitation of traditional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. To overcome this issue of scalability, various other technologies are being researched. Among them are Carbon Nano-Tube Field Effect Transistors (CNTFET), Ribbon Field Effect Transistors (RibbonFET), Graphene Nanoribbon Field Effect Transistor (GNRFET), and Fin shaped Field Effect Transistor (FinFET), which can substitute MOSFETs. Due to carbon nanotubes' excellent conductivity supremacy, CNTFETs are a promising new solution. However, implementing a CNTFET and making circuits from it is still challenging as CNTFETs can exhibit properties of both semiconductor and metal depending on various parameters. This paper will illustrate the characteristics of the CNTFET, compare the power consumption and propagation delay of basic logic gates made using the CNTFET and MOSFET technology. The parameter tuning is done by measuring the power and delay for all parameter values. The Simulation of CNTFET is done on the Stanford CNTFET model using H-Spice.

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Effects of Different Oxide Thicknesses on the Characteristics of CNTFET

Cited by 8 publications

References 14 publications

The Impact of Variation in Diameter and Dielectric Materials of the CNT Field-Effect Transistor

The Impact of Variation in Diameter and Dielectric Materials of the CNT Field-Effect Transistor

Optimized design of carbon nanotube field-effect transistor using Taguchi method for enhanced current ratio performance

Performance Optimization of Carbon Nano-Tube Field Effect Transistors by Tuning Parameters

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