Silicon (Si) nanoparticles (NPs)
and self-organized high spatial
frequency laser (HSFL) induced periodic surface structures were fabricated
by means of femtosecond ablation of bulk Si target in acetone. The
ablation was performed with ∼40 fs (fwhm) pulses and different
input energies of ∼500, ∼200, ∼150, ∼100,
∼50, and ∼10 μJ. Fabricated NPs and nanostructures
(NSs) were characterized by UV–visible absorption spectroscopy,
photoluminescence (PL) spectroscopy, Raman spectroscopy, transmission
electron microscopy, and field emission scanning electron microscopy.
The average sizes of the NPs were estimated to be in the 4–135
nm range. From the PL studies of Si NPs of different sizes, we have
observed a size-dependent shift toward blue spectral region. We could
tune the observed PL peak in the spectral range of 440–515
nm. The crystalline and amorphous nature of the Si nanoparticles and
nanostructures was investigated using selected area electron diffraction
and Raman spectra. Complex refractive index, conduction band electron
density of the Si NPs, estimated by measuring the effective spot size
corresponding to each input energies, were observed to play a crucial
role in determining the periodicity of HSFL induced periodic surface
structures. Experimentally measured periodicity of gratings was in
good agreement with the theory.