2018
DOI: 10.1007/s10854-018-9359-7
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Effects of dopant ions on the conductivity of Ce0.75Sm0.2M0.05O1.875 (M = Al, Fe, Y, Bi) electrolytes

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Cited by 11 publications
(12 citation statements)
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“…Developing resistive barriers by the control of grain boundaries is of interest in a number of applications, such as varistors, thermistors, and barrier layer capacitors . In the case of conventional varistors, ZnO is usually doped with Bi 2 O 3 , Sb 2 O 3 , CoO, MnO, or Cr 2 O 3 and sintered at high temperatures (≈1000 °C) to obtain an inorganic resistive intergranular boundary in the range of 1–10 nm .…”
Section: Case Studies In Property Designmentioning
confidence: 99%
“…Developing resistive barriers by the control of grain boundaries is of interest in a number of applications, such as varistors, thermistors, and barrier layer capacitors . In the case of conventional varistors, ZnO is usually doped with Bi 2 O 3 , Sb 2 O 3 , CoO, MnO, or Cr 2 O 3 and sintered at high temperatures (≈1000 °C) to obtain an inorganic resistive intergranular boundary in the range of 1–10 nm .…”
Section: Case Studies In Property Designmentioning
confidence: 99%
“…Please check for correctness.█ conductivity in the grains and back-to-back Schottky barriers to limit conduction across each grain boundary, with acceptor dopants, and inorganic intergranular phases controlling the electrical transport across a grain boundary. [10][11][12] In the case of ZnO doped with Bi2O3, the thickness of intergranular phase is between 1 and 5 nm, and with other dopant soluble in the interfaces of ZnO this thickness can be around 10 nm. [13][14][15][16] In commercial varistors, there are a number of dopants and firing processes to control the details of the interfaces and the overall microstructures.…”
Section: Introductionmentioning
confidence: 99%
“…Ultraviolet (UV) detectors are widely used in astronomy, combustion engineering, water purication, ame detection, biological effects and other elds. [1][2][3][4][5] Over the years, wide band gap semiconductor materials (GaN, SiC and ZnO) have attracted more attention from researchers, especially for ZnO, due to its unique desirable properties such as wide band gap (3.2 eV), high exciton binding energy (60 meV), low cost, natural abundance and its ability to work in high temperature and damp environments. [6][7][8][9][10] However, photoconductive UV detectors based on pure ZnO lms show relatively poor response properties in the UV region, because of the large carrier concentration and fast recombination rate.…”
Section: Introductionmentioning
confidence: 99%