Tungsten oxide thin films with different stoichiometry have been deposited on In 2 O 3 : SnO 2 glass (ITO) and Si wafer by pulsed laser deposition (PLD) technique at different deposition temperatures and oxygen pressure. The structural properties of WO 3 thin films were analyzed by using a scanning accessory of transmission electron microscope (STEM), X-ray diffraction (XRD), Fourier transform infrared spectrum (FT-IR), Raman spectrum (RS). Thin films deposited at 200 C on ITO showed amorphous structure, those deposited at 300 and 400 C on ITO showed nanocrystalline triclinic structure. As for samples deposited at 400 C, in which the crystals keep nanocrystalline, cyclic voltammograms at sweep rate of 50 mV/s shows that no long-term degradation was noted at least up to 1000 cycles, and durability was verified to 8000 cycles in the voltage range between --1.2 and 1.4 V. Its open and porous structure is suitable for Li-ions going into and out, and induced improved cycle stability and reversibility.