Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode

Abstract

The reliability of RF AlGaN/GaN HEMT devices on SiC substrate is investigated here in pulsed RF condition at nominal and maximum rating drain quiescent bias. During these 3500 hours tests, high voltage especially during the RF pulse leads to a progressive decrease in g m and I DS S while trap concentration increases. These evolutions may be attributed to trap generation by hot carrier injection and highlight the importance of drain quiescent voltage as an important acceleration factor for this technology's reliability in pulsed RF conditions.

Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using deep-level transient Fourier spectroscopy

“…The defect states in GaN based HEMT have been studied with different techniques such as low frequency noise [19][20][21], drain current transient spectroscopy [22][23][24][25] and deep-level transient spectroscopy (DLTS) [22,25,26]. In the same time, with the development of GaN MOSFET, p-type and n-type doped GaN Schottky diodes grown on Al 2 O 3 [27][28][29][30] or on SiC [31,32] substrates have also been studied.…”