Effects of Electric Field and External Magnetic Field on the Electronic and Thermoelectric Properties of the h-BAs Monolayer and Bilayer: Tight-Binding Approach

Abstract

Two-dimensional materials atoms of groups IV and III-V have obtained extensive attention due to their novel properties. In this work, we apply the tight-binding model and Green's function approach to the hexagonal boron arsenide (h-BAs) monolayer and bilayer to investigate their electronic and thermoelectric properties. We find that the h-BAs monolayer behaves as a p-type semiconductor and it can be changed to the n-type by applying an external magnetic field. Also, the h-BAs bilayer with (A-A) stacked has a semi-metallic property but (A-B) stacked is a semiconductor. The results show that the band gap can be controlled by applying an electric field and an external magnetic field. We found that the h-BAs monolayer and bilayer thermal and electrical conductivity increase in the presence of an electric field and an external magnetic field. Controlling the Seebeck coefficient of the material is a unique phenomenon that provides advanced applications for these materials in thermoelectric coolers and waste heat harvesting. Here, we have been able to regulate the Seebeck coefficient of the h-BAs monolayer and bilayer by using the electric and external magnetic fields.

Interaction of the III-As monolayer with SARS-CoV-2 biomarkers: implications for biosensor development

“…The thermal and electrical conductivity of the BA monolayer can be altered using electrical and external magnetic fields. 32 The BA monolayer is also thermally stable under both tensile and compressive strains. 33 The GaAs monolayer has exhibited a high degree of carrier mobility, an adjustable band gap, and a robust response to second harmonic generation.…”