Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium

Suni, I.; Göltz, G.; Nicolet, M.‐A.; Lau, S. S.

doi:10.1016/0040-6090(82)90102-x

Cited by 108 publications

(45 citation statements)

References 16 publications

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“…This is consistent with earlier studies on annealing of ion implantation damage and recrystallization of amorphous Ge where it has been found that the defects are removed at temperatures 300-500°C. [16][17][18] The annealing temperature of the observed vacancy clusters is similar to what Krause-Rehberg et al 7 found in high-stress and low-temperature deformed highpurity germanium.…”

Section: B Passupporting

confidence: 67%

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

et al. 2008

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Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1 ϫ 10 12 cm −2 and 4 ϫ 10 14 cm −2 . Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1 ϫ 10 13 cm −2 and a fluence of 1 ϫ 10 14 cm −2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200-400°C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.

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Section: B Passupporting

confidence: 67%

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

et al. 2008

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“…The SPEG process has been studied extensively for Si and is known to be influenced by many variables [10][11][12][13][14][15][16][17][18][19][20][21], though comparatively minimal similar research has been performed for Ge. A key difference between Ge and Si is that Ge is known to become highly porous [22][23][24][25][26][27][28][29] at doses above 4 Â 10 15 cm À2 .…”

Section: Introductionmentioning

confidence: 99%

Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

Darby

Yates

Rudawski

et al. 2011

Nuclear Instruments and Methods in Physics Research Section B:

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“…The influence of impurities on the recrystallization rate of amorphous Si has been intensively investigated in the past. In a certain concentration range, electrically active elements like B and P are known to have an increasing effect [3,4,5] on the SPER (solid-phase epitaxial regrowth) rate whereas the elements C, N, and O can retard it [6]. The recrystallization behavior of silicon amorphized by implantation of Rb and Cs has not been investigated so far.…”

Section: Introductionmentioning

confidence: 99%

Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

Maier

Häublein

Ryssel

et al. 2012

AIP Conference Proceedings

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Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method Appl. Phys. Lett. 101, 122102 (2012) A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process J. Appl. Phys. 112, 064302 (2012) Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap J. Appl. Phys. 112, 054909 (2012) Additional information on AIP Conf. Proc. Abstract. The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.

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Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium

Cited by 108 publications

References 16 publications

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Self-implantation energy and dose effects on Ge solid-phase epitaxial growth

Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

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