Effects of electrode fabrication on electrical properties of CdMgTe room temperature radiation detectors

Yu, Pengfei; Gao, Pandeng; Jiang, Biru; Zhao, Han; Zhao, Shiwei; Liu, Wenfei; Sun, Xingming; Luan, Lan; Rao, Tianjing

doi:10.1016/j.mssp.2022.107178

Cited by 3 publications

(1 citation statement)

References 20 publications

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“…CdTe-based compounds such as (Cd,Zn)Te [ 1 , 2 , 3 , 4 ], (Cd,Zn)(Te,Se) [ 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 ], (Cd,Mn)Te [ 19 , 20 , 21 , 22 , 23 , 24 ], (Cd,Mn)(Te,Se) [ 25 , 26 ], (Cd,Mg)Te [ 27 , 28 , 29 , 30 , 31 , 32 ], and Cd(Te,Se) [ 33 , 34 , 35 , 36 , 37 , 38 , 39 ] are currently being tested as materials for room-temperature X- and gamma-ray detectors. In these nuclear detectors, it is crucial to maximize the flow of radiation-induced charge carriers through the detector volume to the respective electrodes.…”

Section: Introductionmentioning

confidence: 99%

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

Masłowska,

Kochanowska,

Sulich

et al. 2024

Sensors

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This study explores the suitability of (Cd,Mn)Te and (Cd,Mn)(Te,Se) as room-temperature X-ray and gamma-ray detector materials, grown using the Bridgman method. The investigation compares their crystal structure, mechanical and optical properties, and radiation detection capabilities. Both crystals can yield large-area single crystal samples measuring approximately 30 × 30 mm2. In low-temperature photoluminescence analysis, both materials showed defect states, and annealing in cadmium vapors effectively eliminated donor–acceptor pair luminescence in (Cd,Mn)Te but not in (Cd,Mn)(Te,Se). Moreover, harder (Cd,Mn)(Te,Se) exhibited a higher etch pit density compared to softer (Cd,Mn)Te. X-ray diffraction examination revealed uniform lattice constant distribution in both compounds, with variations at a part per million level. (Cd,Mn)Te crystals demonstrated excellent single crystal properties with narrower omega scan widths, while (Cd,Mn)(Te,Se) exhibited a high contribution of block-like structures with significantly larger misorientation angles. Spectroscopic evaluations revealed better performance of a pixelated (Cd,Mn)Te detector, in comparison to (Cd,Mn)(Te,Se), achieving a mean full width at half maximum of 14% for the 122 keV gamma peak of Co-57. The reduced performance of the (Cd,Mn)(Te,Se) detector may be attributed to deep trap-related luminescence or block-like structures with larger misorientation angles. In conclusion, Bridgman-grown (Cd,Mn)Te emerges as a more promising material for X-ray and gamma-ray detectors when compared to (Cd,Mn)(Te,Se).

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Section: Introductionmentioning

confidence: 99%

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

Masłowska,

Kochanowska,

Sulich

et al. 2024

Sensors

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Growth and characterization of large-size CdMgTe single crystals doped with different in amounts

Yu,

Zhao,

Gao

et al. 2024

Vacuum

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Defects formation on the surface of Si-substrates during thermal sputtering of gold

Kukurudziak,

Kukurudziak

2023

TKEA

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Silicon photodetectors, in particular p–i–n photodiodes, are widely used as sensors of optical radiation. With technological advances, the requirements for the parameters and reliability of these elements of solid-state electronics are increasing sharply, thus improving these characteristics is an important task. During the production of silicon photosensors, parameters were observed to degrade after the stage of forming contact pads by thermal sputtering of chrome-gold. Examination of the samples in the selective etchant allowed discovering the complexes of structural defects, which contributed to the deterioration of the parameters, in particular, the growth of dark currents. When investigating the causes of the appearance of these defects, it was established that they were formed as a result of local melting of silicon when gold “drops” hit it with a temperature higher than the melting temperature of silicon due to boiling in the evaporator. It was established that the use of wire is accompanied by a more intensive appearance of gold drops than when using beads. It was also noticed that the roughness of the morphology in the case of sputtering from a wire is significantly higher than in the case of sputtering from beads. It is noted that after the metallization is formed, photolithography is performed on the front side of the substrates to form contact pads, and considering the possibility of etching due to the presence of gold thickenings, it is better to spray on the front side from crowns. Wire spraying should be used for the reverse side of substrates, where defect formation is less critical. The formation of the described defects can be minimized by using spraying from closed evaporators or by increasing the time of spraying on the shutter during gold melting.

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Effects of electrode fabrication on electrical properties of CdMgTe room temperature radiation detectors

Cited by 3 publications

References 20 publications

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

Bridgman-Grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A Comparison of Suitability for X and Gamma Detectors

Growth and characterization of large-size CdMgTe single crystals doped with different in amounts

Defects formation on the surface of Si-substrates during thermal sputtering of gold

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