Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

Germain, Marianne; Kartheuser, E.; Gurskii, A. L.; Луценко, Е. В.; Marko, Igor P.; Pavlovskii, V. N.; Yablonskii, G. P.; Heime, K.; Heuken, M.; Schineller, B.

doi:10.1063/1.1471368

Cited by 14 publications

(2 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Local temperature rises are dominated by electron−phonon coupling, which transfers energy from the electron beam to the semiconductor lattice. In this case, the higher values of electron−phonon coupling constants ( S = 2.81 for GaN, , 2.16 for CdS, 1.67 for CdSe) and Debye temperatures (θ D = 600K for GaN, 219 K for CdS, and 181 K for CdSe) correlate with more efficient thermal excitation of GaN than CdS than CdSe. While differences in efficiency of thermal excitation are consistent with our findings, contributions by differences in crystalline quality and interfacial thermal conductivity cannot conclusively be dismissed.…”

Section: Resultsmentioning

confidence: 89%

Spectroscopic Evidence for Exceptional Thermal Contribution to Electron Beam-Induced Fragmentation

et al. 2010

View full text Add to dashboard Cite

While electron beam induced fragmentation (EBIF) has been reported to result in the formation of nanocrystals of various compositions, the physical forces driving this phenomenon are still poorly understood. We report EBIF to be a much more general phenomenon than previously appreciated, operative across a wide variety of metals, semiconductors and insulators. In addition, we leverage the temperature dependent bandgap of several semiconductors to quantify -using in situ cathodoluminescence spectroscopy -the thermal contribution to EBIF, and find extreme temperature rises upwards of 1000K.

show abstract

Section: Resultsmentioning

confidence: 89%

Spectroscopic Evidence for Exceptional Thermal Contribution to Electron Beam-Induced Fragmentation

et al. 2010

View full text Add to dashboard Cite

show abstract

“…The usual materials for fabricating the semiconductor QW structures, for example GaAs/Al x Ga 1−x As, are ionic. Therefore, the interplay of the electron-LO-phonon interaction can cause polaron-related effects, which can change properties such as the energy and effective mass of the carrier in confined QWs [1][2][3][4][5][6][7][8][9][10][11]. However, this effect is still under consideration in real materials [11].…”

Section: Introductionmentioning

confidence: 99%

Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach

Kundrotas

Čerškus²,

Ašmontas³

et al. 2007

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This paper reports the observation of phonon sidebands in the photoluminescence spectra of Be acceptor-doped GaAs/AlAs multiple quantum wells. The intensity and energetic positions of the sideband lines are investigated experimentally for several quantum wells having various doping concentrations and photoluminescence excitation intensities. Theoretical analysis of a sideband-related lineshape, considering their energy position and impurity-induced spectra, has shown that phonon satellites can be attributed to free-electron-Be acceptor transitions involving longitudinal optical phonons of the GaAs-the host material of the studied quantum wells. The Huang-Rhys factor which determines the distribution of luminescence intensities between the phonon replicas and the main no-phonon peak was examined both experimentally and theoretically by varying the quantum well width. Thus, it has been found that this factor increases monotonically from 0.052 to 0.11 as the width of the quantum well decreases from 20 nm to 5 nm. The dependence of the Huang-Rhys factor on the width of the quantum well for a free-to-acceptor recombination was calculated applying the fractional-dimensional space approach. The proposed model adequately describes the experimentally determined dependence of the Huang-Rhys factor.

show abstract

Polaron effects due to interface optical‐phonons in wurtzite GaN/AlN quantum wells

Zhu

Shi

2005

Physica Status Solidi (b)

View full text Add to dashboard Cite

Considering the effects of the built-in electric field (BEF) induced by the spontaneous and piezoelectric polarizations of wurtzite GaN/AlN quantum wells (QW's), the polaron energy shift and the effective mass due to the electron interactions with the interface optical-phonons are investigated theoretically by means of Lee-Low-Pines variational approach. We find that the BEF has a remarkable influence on the polaron effects especially for a QW with well width d > 6 nm. The polaron energy shift increases slowly and its effective mass approaches to a constant if d is further increased. On the contrary, both the polaron energy shift and the effective mass decrease slowly with the increasing of d if the BEF is ignored.

show abstract

Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

Cited by 14 publications

References 41 publications

Spectroscopic Evidence for Exceptional Thermal Contribution to Electron Beam-Induced Fragmentation

Spectroscopic Evidence for Exceptional Thermal Contribution to Electron Beam-Induced Fragmentation

Impurity-induced Huang–Rhys factor in beryllium δ-doped GaAs/AlAs multiple quantum wells: fractional-dimensional space approach

Polaron effects due to interface optical‐phonons in wurtzite GaN/AlN quantum wells

Contact Info

Product

Resources

About