2024
DOI: 10.1109/ted.2024.3389633
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Effects of Electron Quantum Confinement on Velocity Overshoot in Si Nanosheet Gate-All-Around FETs

Junichi Hattori,
Koichi Fukuda,
Tsutomu Ikegami
et al.

Abstract: We study the relationship between velocity overshoot (VO) and quantum confinement (QC) in electron transport in Si nanosheet (NS) gate-all-around (GAA) fieldeffect transistors (FETs) through device simulation. VO is incorporated into the simulation with an energy transport (ET) model, and QC with a density-gradient (DG) model. We measure the effects of VO on the NS FETs by comparing their static characteristics obtained with the ET model and with a drift-diffusion (DD) model, which essentially cannot consider … Show more

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