Effects of Electron Radiation on the Electrical and Optical Properties of HgCdTe

Mallon, C. E.; Naber, J. A.; Colwell, J.F.; Green, B. A.

doi:10.1109/tns.1973.4327396

Cited by 16 publications

(4 citation statements)

References 4 publications

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“…PbS detectors are usually operated with internal gain ( ), which is the ratio of the material lifetime ( ) to the sweepout time ( ) in the device. The optical responsivity ( ) in such a detector can be written as (3) where is the quantum efficiency, is the wavelength, is Planck's constant, and is the speed of light. The sweepout time can be written as (4) where is the mobility and is the field across the detector.…”

Section: A Permanent Degradationmentioning

confidence: 99%

Radiation effects on photonic imagers-a historical perspective

Pickel

Kalma

Hopkinson³

et al. 2003

IEEE Trans. Nucl. Sci.

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Photonic imagers are being increasingly used in space systems, where they are exposed to the space radiation environment. Unique properties of these devices require special considerations for radiation effects. This paper summarizes the evolution of radiation effects understanding in infrared detector technology, charge coupled devices, and active pixel sensors. The paper provides a discussion of key radiation effects developments and a view of the future of the technologies from a radiation effects perspective.

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Section: A Permanent Degradationmentioning

confidence: 99%

Radiation effects on photonic imagers-a historical perspective

Pickel

Kalma

Hopkinson³

et al. 2003

IEEE Trans. Nucl. Sci.

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“…Another well known example is determination of the energy gap E, from an analysis of the temperature dependence of the intrinsic carrier density: ni (np)'j* [4,[86][87][88]. In lowest order (ignoring non-parabolicity and degeneracy effects), the 'law of mass action' yields where m$ and m : are the density-of-states effective masses for electrons and holes.…”

Section: Energy Band Characterizationmentioning

confidence: 99%

“…In lowest order (ignoring non-parabolicity and degeneracy effects), the 'law of mass action' yields where m$ and m : are the density-of-states effective masses for electrons and holes. Intrinsic carrier concentrations in Hg,-,Cd,Te have been studied experimentally and theoretically by a number of investigators [33,57,61,86,[89][90][91][92][93][94]. The determination of E, from ni(T) has been used to characterize the composition x in Hg,_,Cd,Te and Hg,_,Jn,Te alloys [SS], and the intrinsic concentration also plays a central role in many aspects of IR device operation [94].…”

Section: Energy Band Characterizationmentioning

confidence: 99%

Methods for magnetotransport characterization of IR detector materials

Meyer

Hoffman

Bartoli

et al. 1993

Semicond. Sci. Technol.

112

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Advanced techniques for the magnetotransport characterization of semiconductor IR detector materials are reviewed. Both conventional mixed-conduction and 'mobility spectrum' analyses of the resistivity tensor as a function of magnetic field and temperature are discussed, as well as a hybrid approach which exploits the advantages of both methods. Assuming that the data are sufficiently sensitive, one obtains concentrations and mobilities for each electron and hole species present in a given sample. This is particularly valuable for narrow-gap infrared detector materials such as Hg,,Cd,Te, since the coexistence of multiple species tends to be the rule rather than the exception, and 'anomalous' Hall data are easily misinterpreted if inferences are drawn from measurements at only a single magnetic field. In addition to bulk electron and hole densities and mobilities, one can determine inversion and accumulation layer properties from the anomalous Hall effect, acceptor binding energies and compensation ratios from the low-temperature freeze-out of free holes, and energy gaps from the temperature dependence of the intrinsic carrier concentration. Shubnikov-de Haas and quantum Hall measurements provide additional information about the spatial distribution of the carriers. Electron and hole mobilities in Hg,,Cd,Te detector materials will be briefly reviewed, and theoretical and experimental results compared

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“…The transition of valence electrons to conduction band can considerably increase the electrical conductivity of both insulators and semiconductors; this phenomenon is known as radiationinduced conductivity. This technique tremendously improves material qualities and gives long-lasting effect [60]. , respectively [61,62].…”

Section: Transmission Electron Microscopy (Tem) Studiesmentioning

confidence: 99%

Effect of electron beam irradiation on EIS and photoelectrochemical performance of electrodeposited nanocrystalline Bi2Te3 thin films

Thorat¹,

Harale²,

Dhole³

et al. 2021

J Mater Sci: Mater Electron

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In this research work, we have synthesized nanocrystalline Bi 2 Te 3 thin films for photoelectrochemical (PEC) solar cell application by potentiostatic electrodeposition method on stainless steel substrates. Subsequently films were irradiated with electron beam irradiation (EBI) of energy 4.5 MeV at various doses of irradiation ranging from 10 to 50 kGy. The experimental results showed that synthesized Bi 2 Te 3 thin films having polycrystalline nature and rhombohedral crystal structure with momentous morphological digression through various doses of irradiation. The electrochemical active surface area (ECSA) and photoelectrochemical (PEC) performance of Bi 2 Te 3 thin films were improved well at irradiation dose of 40 kGy. The calculated values of photoconversion efficiency and fill factor for Bi 2 Te 3 thin film were found to be 0.1837% and 0.5383, respectively. The values of photoconversion efficiency and fill factor of same electrode before irradiation have values 0.0987% and 0.3979, respectively. The enhancement in efficiency and fill factor due to EBI were found 53% and 74%, respectively. The enhancement in PEC properties is due to increased active surface area of the Bi 2 Te 3 films after irradiation dose. The results showed that, EBI are capable to strengthen the quality of electrode for PEC solar cell application.

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Effects of Electron Radiation on the Electrical and Optical Properties of HgCdTe

Cited by 16 publications

References 4 publications

Radiation effects on photonic imagers-a historical perspective

Radiation effects on photonic imagers-a historical perspective

Methods for magnetotransport characterization of IR detector materials

Effect of electron beam irradiation on EIS and photoelectrochemical performance of electrodeposited nanocrystalline Bi2Te3 thin films

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