Effects of Er doping site and concentration on piezoelectric, ferroelectric, and optical properties of ferroelectric Na0.5Bi0.5TiO3

Abstract

The piezoelectric, ferroelectric, and optical properties of Er-doped Na0.5Bi0.5TiO3 ceramics were investigated in terms of Er3+ ion occupying the A- and B-site with different Er ion concentrations. Compared with B-site doped samples, the A-site doped ceramics have much stronger piezoelectricity, ferroelectric property, and luminescence intensity. Upon the excitation of 980 nm, all the Er-doped Na0.5Bi0.5TiO3 ceramics exhibit strong green and red emissions. The present investigation demonstrates that the relative intensity of green and red upconversion emissions can be tuned by changing Er ion concentration. In this study, influence of the electrical and luminescence properties of the Er doped ceramics is discussed.

Up-conversion luminescence and electric properties of Tm3+/Yb3+ co-doped (0.94Na0.5Bi0.5TiO3–0.06BaTiO3) ceramics

“…ions doping results in decrease of E C . Similar phenomenons were also observed in some literature [16]. With Yb 3?…”

Low-temperature thermometry based on upconversion emission of Ho/Yb-codoped Ba0.77Ca0.23TiO3 ceramics

“…It has been demonstrated that excellent luminescent performances can be obtained in RE doped ferroelectrics [16][17][18][19]. Moreover, it was also revealed that poling is an effective method to modify the emission intensity of RE doped ferroelectrics [20,21].…”

Electrocaloric effect and luminescence properties of lanthanide doped (Na1/2Bi1/2)TiO3 lead free materials

“…Specifically, regarding optical properties it has been observed that some rare earth (RE) elements add additional functionality of light emission in visible spectra to NBT compounds. Zhou et al 9 and recently Luo et al 10 reported a strong green and red emissions in Pr 3þ doped NBT. Furthermore, in Nd 3þ doped NBT crystal, He et al 11 reported a strong absorption around 808 nm that is suitable for AlGaAs diode-laser pumping together with a strong emission around 1.6 lm with long radiation lifetime, which is interesting for application in integrated optoelectronic devices.…”