Effects of Etch Rate on Plasma-Induced Damage to Porous Low-k Films

Iba, Yoshihisa; Kirimura, Tomoyuki; Sasaki, Makoto; Kobayashi, Yasushi; Nakata, Yoshihiro; Nakaishi, Masafumi

doi:10.1143/jjap.47.6923

Cited by 24 publications

(13 citation statements)

References 10 publications

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“…As a rule, the densification and hydrophilization of low-k films occur at the same time. Most of studies were focused on plasma damage by ion-assisted (ioninduced etching, sputtering, densification) processes to reveal the source of damage under typical plasma conditions 151,152,153,154,155,156,157 . Furthermore, these studies are focused mainly on the role of ion-radical dualism in the film damage 158,159 Low-pressure plasmas used in different processing steps produce also a significant vacuumultraviolet or ultraviolet (VUV/UV) photon fluxes.…”

Section: Iii2 Vuv/uv Radiation In Low-k Plasma Processingmentioning

confidence: 99%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

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Section: Iii2 Vuv/uv Radiation In Low-k Plasma Processingmentioning

confidence: 99%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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“…For a given gas or mixture, it appears that high etching rate leads to lower surface damage. This can be attributed to the fact that usually the damage is proportional to the etching time therefore having a high etching rate can favor a low surface damage (8). Surprisingly, CF 3 I+CF 3 H mixture is showing very low surface damage almost independent of the etching rate.…”

Section: Rie M Ode -Low -K/sio2mentioning

confidence: 99%

Low-k etching using CF<inf>3</inf>I, a path to overcome current BEOL integration issues

Gildea

Long

Eisenbraun

et al. 2011

2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference

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CF 3 I, a low greenhouse warming potential gas, has been used for low-k etching using an ICP reactor. Key parameters such as reactor pressure, bias power, ICP power and total gas flow rate were investigated to develop an optimized etch process. A comparison with standard fluorocarbons such as CF 4 , C 4 F 8 or CF 3 H has been made to illustrate the performances of this low environmental impact chemistry.

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“…For instance, in the reactive ion etching (RIE) of dry process, the Si-CH 3 bond reacts with radicals of F Ã and transforms into SiO 2 like bond. 2) This phenomenon, called as damage, is known to cause moisture absorption and increase the k-value of low-k film. 3,4) Although the efforts to decrease the damage in low-k films are continued, it is hard to avoid the formation of damage layer with a decrease in the k-value of dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Sidewall Damage Layer in Low-k Film Using the Interline Dielectric Capacitance Measurements

Furuhashi¹,

Nakanishi²,

Matsumoto³

et al. 2011

Jpn. J. Appl. Phys.

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We investigate a brief method extracting properties of damage layer in low-k film using the electrical measurement of Cu interconnects. In the electrical measurements, the capacitance measurement is useful for evaluating the damage layer in low-k film because the increase of k-value in low-k film affects directly the change of Cu interconnects capacitance. The interline capacitance including the damage layer can be described by a serial connected parallel-plate capacitor model. The analysis of electromagnetic field shows that the interline capacitance does not correspond to the capacitance of parallel-plate capacitor due to the fringe factors of interline capacitance. We can eliminate the fringe factors of interline capacitance by measuring the capacitances of different line heights and succeed in acquiring the relationship between the thickness and the dielectric constant of sidewall damage layer in low-k film.

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Effects of Etch Rate on Plasma-Induced Damage to Porous Low-k Films

Cited by 24 publications

References 10 publications

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Low-k etching using CF<inf>3</inf>I, a path to overcome current BEOL integration issues

Analysis of Sidewall Damage Layer in Low-k Film Using the Interline Dielectric Capacitance Measurements

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