Abstract:During the formation of Ge fin structures on a silicon-on-insulator (SOI) substrate, we found that the dry etching process must be carefully controlled. Otherwise, it may lead to Ge over-etching or the formation of an undesirable Ge fin profile. If the etching process is not well controlled, the top Ge/SOI structure is etched away, and only the Si fin layer remains. In this case, the device exhibits abnormal characteristics. The etching process is emerging as a critical step in device scaling and packaging and… Show more
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