Effects of Excimer Laser Annealing on InGaZnO<sub>4</sub>Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon

Nakata, Masaya; Takechi, Kazushige; Yamaguchi, Shinya; Tokumitsu, Eisuke; Yamaguchi, Hirotaka; Kaneko, Shigeo

doi:10.1143/jjap.48.115505

Cited by 24 publications

(9 citation statements)

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“…Minami et al reported that Si-doped ZnO shows a high conductivity. 23 Although Nakata et al suggested that the reason of the carrier density increasing in a-IGZO film by irradiation of high energy in ELA process would come from the increasing of the amount of oxygen deficiency, 11 we obtained lower O def by the irradiation of high laser energy of 97.7 mJ/cm 2 compared with the O def of no-ELA process, as shown in Fig. 3.…”

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confidence: 49%

“…10 This technique has also been utilized for oxide-semiconductor materials. Nakata et al reported the fabrication of a-IGZO TFTs by ELA process, which acted as a postannealing process, and the improvement of the TFTs characteristics by ELA, 11 suggesting that the ELA process is also a promising technique for improving the characteristics of oxide-semiconductor devices. In this study, we focused on an IZO TFT with a higher field-effect mobility than an a-IGZO TFT.…”

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confidence: 99%

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Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

Fujii

Ishikawa

Ishihara

et al. 2013

Applied Physics Letters

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In this study, we successfully achieved a relatively high field-effect mobility of 37.7 cm 2 /Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50 C according to thermal calculation. Our analysis revealed that high-energy irradiation in ELA produced a mixed phase of InZnO and SiO 2 , leading to the deterioration of TFT characteristics. Oxide semiconductor films deposited by sputtering have recently attracted considerable attention in the fields of transparent and flexible electronics for next-generation displays, in comparison with conventional amorphous silicon-based materials. In particular, an In 2 O 3 -doped ZnO (IZO) thin film is widely recognized as a suitable oxide semiconductor since thin-films transistors (TFTs) with that material in the channel layer yield a higher field-effect mobility than amorphous InGaZnO (a-IGZO) TFTs. [1][2][3] In the case of the IZO film, the amorphous phase generally provides a high conductivity of about 400 X À1 cm À1 , which is much higher than the conductivity suitable for the TFT's channel layer. 4,5 The conductivity of this material can possibly be reduced by a thermal annealing process. 6,7 In previous reports, thermal annealing with a relatively high temperature of about 300 C has been proposed to produce operative IZO TFTs. 8,9 However, such a high-temperature process in postannealing limits the choice for plastic flexible substrates. The excimer laser annealing (ELA) process with short pulses has been widely utilized to achieve a low processing temperature to produce a polycrystalline silicon thin film on a glass substrate. 10 This technique has also been utilized for oxide-semiconductor materials. Nakata et al. reported the fabrication of a-IGZO TFTs by ELA process, which acted as a postannealing process, and the improvement of the TFTs characteristics by ELA, 11 suggesting that the ELA process is also a promising technique for improving the characteristics of oxide-semiconductor devices. In this study, we focused on an IZO TFT with a higher field-effect mobility than an a-IGZO TFT. We assumed that an ELA process crystallizes IZO with nanograins easily since this material has a lower crystallization temperature than a-IGZO 12,13 and that an IZO film composed of nanograins has better characteristics than a noncrystallized IZO TFT since carrier scattering is suppressed in the disordered film. We considered it is necessary to use a laser with a wavelength shorter than 400 nm, for the laser to be absorbed by the IZO film since IZO has a wide band gap (higher than 3 eV). 14 We used an XeCl excimer laser with a sufficiently short wavelength of 308 nm (photon energy: 4.02 eV) 15,16 and investigated the effects of the ELA process on the IZO TFT characteristics and film properties.A thermally oxidized SiO 2 film of 100 nm thickness was formed on a highly doped p-type silicon wafer (<0.002 X cm) as a gate insulator. IZO films with...

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confidence: 49%

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confidence: 99%

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

Fujii

Ishikawa

Ishihara

et al. 2013

Applied Physics Letters

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“…In the legend S means “solution processed” (data compiled from refs. 66, 78–276 only dealing with GIZO TFTs, the ones corresponding to solution process are in Tables 2a, b and c.…”

Section: Recent Progress Of N‐type Oxide Tftsmentioning

confidence: 99%

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

2012

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Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

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“…Amongst the different metal‐oxide semiconductors, IGZO has been well studied in the context of postdeposition laser treatment. A series of pioneering studies on sputtered IGZO TFTs and the impact of XeCl excimer laser irradiation (308 nm) were reported by Nakata et al In addition to their studies on laser annealed IGZO TFTs on glass and polymer substrates, their work also included an investigation of the temperature gradient during laser annealing. Their calculations showed that LA (fluence 150 mJ cm −2 ) of the 20 nm thick IGZO film induced a dramatic 1500 °C temperature increase in the semiconductor but only 12 and 6 °C change for the polymer and glass substrates, respectively.…”

Section: Laser Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Effects of Excimer Laser Annealing on InGaZnO₄Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon

Cited by 24 publications

References 24 publications

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

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Effects of Excimer Laser Annealing on InGaZnO4Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon

Cited by 24 publications

References 24 publications

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

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Product

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Effects of Excimer Laser Annealing on InGaZnO₄Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon