Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal–oxide–semiconductor field effect transistors

Lu, Ying‐Hsin; Chang, Ting Chang; Ho, Shinn‐Ying; Chen, Ching En; Tsai, Jyun Yu; Liu, Kuan Ju; Liu, Xi Wen; Lin, Chien Yu; Tseng, Tseung‐Yuen; Cheng, Osbert; Huang, Cheng Tung; Yen, Wei Ting

doi:10.1016/j.tsf.2016.09.062

Cited by 2 publications

(2 citation statements)

References 18 publications

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“…It persists a relatively large band gap (>5 eV) [3], a high dielectric constant (∼25) [4], the good thermal and thermodynamic stability in contact with silicon [5]. Consequently, HfO 2 has been the focus of extensive research, especially for its application in high-k gate dielectrics as FETs [6,7].…”

Section: Introductionmentioning

confidence: 99%

The study of interface quality in HfO₂/Si films probed by second harmonic generation

Ye,

Zhang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the semiconductor materials, which is closely related to the interfacial electric field. Here, the TD-SHG technique is used to study the interface quality of atomic layer deposited 15 nm HfO2/Si (n-type/p-type) samples, which is compared to the conventional electrical characterization method. A relation between the interface state density and the time constant extracted from TD-SHG is revealed, indicating that TD-SHG is an effective method to evaluate the interface state density. In addition, the dopant type and dopant density can be disclosed by resolving the dynamic process of TD-SHG. The scenario of interfacial electric field between the initial electric field and the laser-induced electric field is proposed to explain the time-dependent evolution of SHG signal. In conclusion, the TD-SHG is a sensitive and non-contact method as well as simple and fast to characterize the semiconductor materials, which may facilitate the semiconductor in-line testing.

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Section: Introductionmentioning

confidence: 99%

The study of interface quality in HfO₂/Si films probed by second harmonic generation

Ye,

Zhang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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“…HfO 2 has been studied as a replacement for conventional silicon dioxide (SiO 2 ) acting as a gate dielectric with an effective oxide thickness of 5-10 nm in advanced metal-insulator-semiconductor (MIS) technologies. [1][2][3][4][5][6][7][8][9][10][11] It has favorable thermal stability and a higher dielectric constant as compared with SiO 2 . In addition, the dielectric constant of monoclinic HfO 2 was still insufficient.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature Hf-silicate prepared with various thermal budgets

Lin

Huang

2020

Jpn. J. Appl. Phys.

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In this study, the influence of thermal budget on preparing hafnium silicate (HfSiO) and metal–insulator–semiconductor (MIS) structures with tetragonal hafnium oxide (HfO2) films was investigated. Amorphous silicon (a-Si) was used as a sacrificial layer for HfSiO formation. Rapid thermal annealing (RTA) could efficiently drive the oxidation of a-Si with HfO2. The RTA-produced HfSiO film thicker than that produced through furnace annealing could suppress gate leakage in MIS devices, and aid in maintaining a high dielectric constant of the gate insulator. The combination of sacrificial a-Si film use and RTA application resulted in a HfSiO/HfO2 structure (named as hybrid HfO2), which demonstrated a high dielectric constant and strength (29.5 and 21.2 MV cm−1, respectively). MIS devices integrated with this hybrid HfO2 achieved a hysteresis value of only 0.11 V on a flat-band voltage measured at a 50 mV s−1 sweep rate with an applied voltage between −5 and 5 V.

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Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal–oxide–semiconductor field effect transistors

Cited by 2 publications

References 18 publications

The study of interface quality in HfO₂/Si films probed by second harmonic generation

The study of interface quality in HfO₂/Si films probed by second harmonic generation

Low-temperature Hf-silicate prepared with various thermal budgets

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Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal–oxide–semiconductor field effect transistors

Cited by 2 publications

References 18 publications

The study of interface quality in HfO2/Si films probed by second harmonic generation

The study of interface quality in HfO2/Si films probed by second harmonic generation

Low-temperature Hf-silicate prepared with various thermal budgets

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Product

Resources

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The study of interface quality in HfO₂/Si films probed by second harmonic generation

The study of interface quality in HfO₂/Si films probed by second harmonic generation