Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol–gel method

Control of oxygen vacancies in ZnO nanorods by annealing and their influence on ZnO/PEDOT:PSS diode behaviour

“…25 The amount of oxygen species in different samples are listed in Table 2. The oxygen vacancy content clearly decreased in ZnO with increased oxygen partial pressure in the annealing atmosphere, while the amount of adsorbed oxygen decreased during nitrogen annealing, as expected in a low oxygen partial pressure environment.…”

“…They can be mainly classified as vapour-phase deposition and solution-phase synthesis. Vapour-phase deposition such as chemical vapour deposition (CVD), 24,25 sputtering 26 and pulsed laser deposition 27,28 generally require stringent conditions such as high applied voltages, high temperature for the gas phase, and a complex gas-flow system with accurate concentrations. However, more recent developments of vapour-phase deposition methods such as plasma-enhanced CVD have enabled the fabrication of ZnO thin films or nanorods at low temperatures and at large scales.…”

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

“…The as-obtained films were amorphous even at high substrate temperature, but could be converted into monoclinic β-Ga 2 O 3 upon sintering at 1000 ∘ C 51 . which was explained according to the qualitative model in Figure 3 52 2 ] in the AA-CVD of gallium-doped ZnO thin films (horizontal cold-wall tubular reactor, solvent methanol, Ga/Zn atomic ratio 3%, temperature 400-450 ∘ C, growth rate 3.1-5.7 nm min -1 , layer thickness 170-750 nm) 55,56 . Gallium concentrations of 0.4 and 2.1 at% were obtained at 400 and 450 ∘ C, respectively, in the vapor deposition process.…”

“…The formed layers were optically transparent (up to 90% at 550 nm) and reflected IR radiation (up to 45% at 2500 nm) 55 . Spin-coating allowed the formation of crystalline, conductive, and transparent layers of 230-480 nm thickness 56 .…”

Influence of RF power on the opto-electrical and structural properties of gallium-doped zinc oxide thin films

“…are candidate materials for energy efficient glazing [4]. Due to their high visible transparency and reflectance in infrared range of 0.7-2.5 µm, they have been used to develop the low-emissivity windows [4,5]. Also, metal-oxide thin film semiconductors with high carrier density behaves like plasmonic material that acts a role on light absorption and scattering in the interaction of the light with a material [6].…”