Effects of finger dimension on low-frequency noise and optoelectronic properties of Ge metal-semiconductor-metal photodetectors with interdigitated Pt finger electrodes

Structural and optoelectronic characteristics of β-Ga2O3 epitaxial films with Zn alloying and subsequent oxygen annealing

“…Typically, for a MSM UV photodetector, dark noise (shot noise) is usually regarded as the main source of noise. 48,49…”

“…Typically, for a MSM UV photodetector, dark noise (shot noise) is usually regarded as the main source of noise. 48,49 To further investigate the photoresponse properties of MSM photodetectors fabricated from pure b-Ga where P is the light intensity, A is a constant and the y is a parameter that reflects the trapping and recombination of the photo-induced carriers of photodetectors. As we can see, the fitting result shows a nearly linear behaviour for all four detectors, and the y values is calculated to be 0.81, 0.82, 0.…”